Charge Trap Layer Segmentation for Display Afterimage
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Solution Overview
Problem
Current display devices face challenges in achieving improved durability, long-term afterimage, and luminance stability, particularly in terms of afterimage retention and luminance drop phenomena.
Innovation Solution
The display device incorporates a charge trap layer with specific compositions of silicon oxide, including hydrogen and nitrogen atoms, and a pixel defining layer with a black pigment, such as carbon black, to enhance afterimage retention and prevent luminance drops.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a charge trap layer is added to improve long-term afterimage retention, then afterimage retention is improved, but device structure and manufacturing complexity increase
Solution Approach 1:
The charge trap layer is divided into two separate layers: a lower charge trap layer disposed between the first substrate and the buffer layer, and an upper charge trap layer disposed on the buffer layer. This segmentation allows each layer to be optimized independently for charge trapping functionality, improving long-term afterimage retention while maintaining manageable device structure through modular design
Solution Approach 2:
The charge trap layers serve multiple functions: they trap charges to prevent afterimage formation, act as part of the encapsulation structure, and provide a platform for subsequent semiconductor layer formation. This multi-functionality reduces the need for additional separate components, thereby improving reliability without proportionally increasing device complexity
2Reliability
If a black pixel defining layer is added to improve afterimage and luminance stability, then afterimage retention and luminance stability are improved, but device structure and manufacturing complexity increase
Solution Approach 1:
The pixel defining layer is designed to perform multiple functions simultaneously: it defines the pixel pattern through its opening structure, provides black coloration to improve contrast and reduce afterimage, and serves as part of the encapsulation structure. This multi-functionality allows the layer to improve luminance stability and afterimage retention without requiring additional separate components
Solution Approach 2:
The pixel defining layer is strategically positioned to overlap with the semiconductor layer in specific regions, providing localized black coloration where it is most needed for afterimage reduction. The layer includes openings that expose portions of the pixel electrode, creating local variations in optical properties that enhance display quality without uniformly increasing device complexity
3Reliability
If the upper charge trap layer includes specific oxygen atom content (54-56 at %) to improve afterimage retention, then afterimage retention is improved, but manufacturing precision requirements increase
Solution Approach 1:
The upper charge trap layer is designed with a specific oxygen atom content range (54-56 at %) to optimize charge trapping performance. This parameter optimization improves afterimage retention by ensuring the layer has the appropriate stoichiometry for effective charge trapping while maintaining structural stability. The defined range provides a balance between performance optimization and manufacturability
4Reliability
If the lower charge trap layer includes specific silicon and nitrogen atom ratios to improve afterimage retention, then afterimage retention is improved, but manufacturing precision requirements increase
Solution Approach 1:
The lower charge trap layer is designed with a specific silicon to nitrogen atom ratio range (1.6 to 2.5) to optimize charge trapping performance. This parameter optimization improves afterimage retention by ensuring the layer has the appropriate stoichiometry for effective charge trapping while maintaining structural stability. The defined range provides a balance between performance optimization and manufacturability
Data Source
AI summary
A display device includes a first barrier layer disposed on a first substrate, a second substrate disposed on the first barrier layer, a second barrier layer disposed on the second substrate, a buffer layer disposed on the second barrier layer, an upper charge trap layer disposed on the buffer layer, the upper charge trap layer including silicon oxide, and having an oxygen atom content in a range of about 54 at % to about 56 at %, a semiconductor layer disposed on the upper charge trap layer, a pixel electrode disposed on the semiconductor layer and electrically connected to the semiconductor layer, a pixel defining layer disposed on the pixel electrode, the pixel defining layer including an opening exposing a portion of the pixel electrode, and having a black color, an intermediate layer disposed on the pixel electrode and disposed in the opening and a common electrode disposed on the intermediate layer.