Charge-Trap Memory Stack With Deep Interface Traps for Data Retention
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Solution Overview
Problem
Embedded flash memory devices suffer from poor data retention capability and charge overflow, leading to data read errors due to inadequate charge storage and retention.
Innovation Solution
A storage device structure comprising a substrate with a tunnel oxide layer, a silicon-rich nitride layer, and a modulated interface layer with deeper electron traps, enhancing charge trapping capabilities and stability, formed through specific chemical vapor deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional embedded flash memory structure is used, then the device achieves basic storage functionality, but data retention capability is poor and charge overflow occurs
Solution Approach 1:
The charge storage layer is segmented into two distinct layers: a silicon-rich nitride layer and a modulated interface layer. Each layer serves a specific function - the silicon-rich nitride layer provides bulk charge storage, while the modulated interface layer with deeper trap depths prevents charge overflow and improves retention. This segmentation allows independent optimization of each layer's properties to solve the contradiction between basic storage functionality and data retention capability.
Solution Approach 2:
The modulated interface layer is designed with locally superior properties - deeper trap depths compared to the silicon-rich nitride layer. This local quality enhancement at the interface region specifically addresses the charge overflow problem by creating a potential well that confines charges more effectively, thereby improving data retention capability without compromising the overall storage functionality of the device.
2Quantity of substance
If the charge storage layer is designed for high capacity, then storage capacity increases, but charge stability decreases leading to data read errors
Solution Approach 1:
The charge storage layer is divided into two functional segments: the silicon-rich nitride layer for bulk charge storage (providing high capacity) and the modulated interface layer for charge stabilization (providing read accuracy). This segmentation enables the device to achieve both high storage capacity and reliable data reading by assigning different roles to each segment.
Solution Approach 2:
The modulated interface layer acts as an intermediary between the charge storage function and the charge retention function. It mediates the contradiction by providing a transition region with deeper trap depths that stabilizes charges while allowing sufficient charge storage capacity, thereby enabling both high capacity and accurate reading.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modulated interface layer with higher trap densities and deeper trap depths improves data retention and reduces charge leakage, enhancing storage performance and reliability compared to conventional embedded flash memory devices.
Implementation Method 1
electron traps in the modulated interface layer can have deeper trap depths than in the silicon-rich nitride layer
Implementation Method 2
the modulated interface layer can include a higher density of traps for electron charges than the silicon-rich nitride layer
Data Source
AI summary
A storage device for storing electron charges includes a substrate, a tunnel oxide layer formed on the substrate, a silicon-rich nitride layer comprising silicon nitride on the tunnel oxide layer, and a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide. The electron traps in the modulated interface layer have deeper trap depths than in the silicon-rich nitride layer.