Chemically Amplified Positive Resist for Acid Diffusion Control

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Solution Overview

Problem

Existing chemically amplified resist compositions face challenges in achieving high resolution, reduced line-edge roughness (LER), improved rectangularity, and etching resistance, particularly in the formation of small feature sizes, with issues related to acid diffusion and solubility of polymers in organic solvents.

Innovation Solution

A chemically amplified positive resist composition comprising a base polymer with specific repeat units derived from hydroxystyrene or hydroxynaphthalene, protected with acid labile groups, a photoacid generator, and an organic solvent, designed to minimize acid diffusion and enhance solubility, resulting in a resist pattern with high resolution, reduced LER, and improved etching resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a chemically amplified resist composition is used to achieve high sensitivity for small feature size patterning, then the resolution is improved, but acid diffusion occurs which degrades the line-edge roughness and pattern profile

Engineering Contradiction:
ImproveresolutionVSAvoidline-edge roughness
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent introduces a base polymer with specific functional groups (carboxylic acid groups, hydroxyl groups, or amine groups) as an intermediary substance that interacts with the photoacid generator to control acid diffusion. The base polymer acts as a buffer or trap for the generated acid, limiting its diffusion distance and preventing excessive acid spread that would degrade line-edge roughness, while still allowing sufficient acid to reach the intended pattern areas for high-resolution patterning.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the chemical parameters of the resist system by selecting specific base polymers with controlled functional group densities and types. By adjusting the concentration and nature of acid-reactive functional groups in the base polymer, the patent optimizes the balance between acid diffusion control (for low LER) and acid availability (for high resolution), effectively changing the chemical environment to resolve the contradiction.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If the base polymer contains repeat units capable of generating acid upon exposure, then acid diffusion is controlled and LER is reduced, but the solubility in organic solvent deteriorates

Engineering Contradiction:
Improveline-edge roughnessVSAvoidsolubility in organic solvent
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies local quality by incorporating acid-reactive functional groups (carboxylic acid, hydroxyl, or amine groups) at specific locations within the polymer structure rather than uniformly throughout. The base polymer contains repeat units with these functional groups at controlled densities and distributions, allowing acid diffusion control where needed while maintaining overall polymer solubility in organic solvents. This localized functional group placement enables LER reduction without sacrificing manufacturability.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent creates a composite polymer structure combining hydrophobic backbone segments (for solubility in organic solvents) with hydrophilic functional group-containing segments (for acid diffusion control). This composite approach integrates two materials with complementary properties: the hydrophobic portions maintain solubility and processability, while the hydrophilic functional groups provide acid interaction capabilities for LER reduction.

Inventive Principle:
Principle #40Composite materials

3Productivity

If the resist composition is optimized for high sensitivity to reduce exposure time, then productivity is improved, but the pattern profile rectangularity and etching resistance deteriorate

Engineering Contradiction:
Improveexposure efficiencyVSAvoidpattern profile rectangularity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent implements preliminary action by pre-equipping the base polymer with functional groups that will interact with the photoacid generator before exposure. These pre-installed functional groups (carboxylic acid, hydroxyl, or amine groups) are positioned to immediately control acid behavior upon generation, ensuring proper pattern profile formation from the outset. This preliminary preparation allows high sensitivity exposure while maintaining rectangularity, as the acid control mechanism is already in place rather than requiring post-exposure adjustments.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition enables the formation of resist patterns with high resolution, reduced LER, and enhanced etching resistance, suitable for micropatterning technologies like EUV or EB lithography, while minimizing residue defects.

Implementation Method 1

a photoacid generator capable of generating a specific aromatic sulfonic acid

Methodology Applied
Scientific EffectPhotoacid generation: Photodissociation

Implementation Method 2

the base polymer... adapted to increase its solubility in alkaline aqueous solution under the action of acid

Methodology Applied
Scientific EffectAcid-catalyzed deprotection: Catalysis

Implementation Method 3

For exposure of these resist compositions, high-energy radiation such as UV, deep-UV, EUV or EB is used as the energy source

Methodology Applied
Scientific EffectHigh-energy radiation exposure: Radiation

Data Source

PatentUS20250355356A1Chemically amplified positive resist composition and resist pattern forming process
Publication Date: 2025.11.20 SHIN ETSU CHEMICAL CO LTD
  • US20250355356A1 patent drawing
  • US20250355356A1 patent drawing
  • US20250355356A1 patent drawing

AI summary

A chemically amplified positive resist composition is provided comprising a polymer having a dispersity of 1.01-1.19 and comprising repeat units derived from hydroxystyrene or hydroxynaphthalene, and repeat units derived from hydroxystyrene or hydroxynaphthalene having a hydroxy group protected with an acid labile group, a photoacid generator, and an organic solvent. From a resist film of the composition, a resist pattern of small feature size having satisfactory isolated-space resolution, reduced LER, good rectangularity, etch resistance and collapse resistance is formed.