Chip Diode Zener Voltage Control via Rapid Thermal Annealing
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Solution Overview
Problem
It is challenging to precisely control the Zener voltage of Zener diodes within the desired range of 4.0 V to 5.5 V in existing semiconductor devices.
Innovation Solution
A chip diode with a Zener voltage of 4.0 V to 5.5 V is manufactured using a semiconductor substrate with a resistivity of 3 mΩ·cm to 5 mΩ·cm, where a diffusion layer is formed through a rapid thermal annealing process to define a diode junction region, allowing for precise control of the Zener voltage without the need for epitaxial layers or additional thermal oxide films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to manufacture Zener diodes with epitaxial layers and thermal oxide films, then the manufacturing process is more complex and costs are higher, but the Zener voltage control precision is insufficient
Solution Approach 1:
The invention extracts and eliminates the epitaxial layer formation step from the conventional manufacturing process. By directly forming the diffusion layer on the semiconductor substrate without requiring an epitaxial layer, the process complexity is reduced while maintaining precise Zener voltage control through optimized diffusion parameters
Solution Approach 2:
The invention changes the manufacturing parameters by using specific diffusion conditions (temperature, time, concentration) to achieve precise Zener voltage control without epitaxial layers. The diffusion layer depth and impurity concentration are precisely controlled through parameter optimization, enabling accurate Zener voltage specification
2Manufacturing precision
If conventional thermal oxide films are formed on the semiconductor substrate, then the manufacturing process is more complex, but the Zener voltage control is imprecise
Solution Approach 1:
The invention extracts and removes the thermal oxide film formation step from the manufacturing process. By eliminating this step and directly forming the diffusion layer on the substrate surface, the manufacturing process is simplified while Zener voltage precision is maintained through controlled diffusion parameters
Solution Approach 2:
The invention skips the intermediate step of forming thermal oxide films by directly performing the diffusion process on the semiconductor substrate. This rushing through of the manufacturing sequence reduces process complexity and time while achieving the desired precise Zener voltage control
3Manufacturing precision
If extensive heat application is used in the manufacturing process, then the diffusion process is more thorough, but the Zener voltage control precision decreases
Solution Approach 1:
The invention changes the thermal parameters by using optimized diffusion temperature and time conditions. Instead of extensive heat application, precise Zener voltage control is achieved through carefully controlled diffusion parameters that limit heat exposure while maintaining adequate impurity diffusion
Solution Approach 2:
The invention applies partial heat treatment - just enough to achieve the required diffusion depth and concentration profile for precise Zener voltage control, but not excessive heat that would degrade control precision. The diffusion process is optimized to use minimal necessary thermal energy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control of Zener voltage, simplifies the manufacturing process, reduces costs, and enhances the stability and reliability of the chip diode by avoiding the formation of epitaxial layers and minimizing heat application, thus achieving stable characteristics and efficient Zener voltage regulation.
Implementation Method 1
performing an RTA (Rapid Thermal Annealing) process on the surface of the semiconductor substrate to diffuse the impurity to thereby form a diffusion layer
Implementation Method 2
performing an RTA (Rapid Thermal Annealing) process on the surface of the semiconductor substrate
Data Source
AI summary
The present invention is directed to a chip diode with a Zener voltage Vz of 4.0 V to 5.5 V, including a semiconductor substrate having a resistivity of 3 mΩ·cm to 5 mΩ·cm and a diffusion layer formed on a surface of the semiconductor substrate and defining a diode junction region with the semiconductor substrate therebetween, in which the diffusion layer has a depth of 0.01 μm to 0.2 μm from the surface of the semiconductor substrate.