Chip Package Dam Element Thickness Control
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Solution Overview
Problem
In chip package manufacturing, the thickness of the dam element is difficult to reduce due to process limitations, leading to flare issues and warpage problems with thin wafers, which affects product yield and makes it challenging to handle and protect the sensing area.
Innovation Solution
A chip package design where the dam element is formed by patterning and grinding a carrier, creating a recess with a rough surface, allowing for controlled thickness between 20 μm to 750 μm, and adhering the wafer to the carrier with an adhesive layer to prevent warpage and pollution during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the thickness of the dam element is reduced, then the flare issue is prevented, but the process limitations make it difficult to reduce the thickness
Solution Approach 1:
The patent changes the thickness parameter of the dam element from conventional thick dimensions to a controlled range of 20-750 μm. This parameter change is achieved through a novel manufacturing process involving carrier patterning, grinding, and impacting that overcomes traditional process limitations, thereby reducing flare while maintaining manufacturability
Solution Approach 2:
The patent extracts the dam element formation process from traditional epoxy-based methods and reimagines it as a precision-machined structural component. By taking out the dam element as a separate patterned feature on the carrier rather than relying on epoxy thickness, the design achieves precise thickness control and rough surface formation without conventional process constraints
2Weight of moving object
If the wafer is made thin, then the weight is reduced, but the wafer becomes difficult to move and handle due to process limitations
Solution Approach 1:
The patent introduces the carrier as an intermediary substrate that supports the thin wafer during manufacturing. The carrier provides mechanical strength and handling capability, allowing thin wafers to be processed without direct manipulation. The adhesive layer acts as another intermediary, bonding the wafer to the carrier while preserving the thin profile of the wafer itself
3Quantity of substance
If the wafer is made thin, then the material usage is reduced, but the tensile strength is insufficient and the wafer may easily be damaged
Solution Approach 1:
The patent applies preliminary action by bonding the thin wafer to the stronger carrier substrate before subsequent processing steps. This pre-reinforcement through adhesive bonding provides the necessary tensile strength and mechanical support throughout the manufacturing process, preventing damage to the thin wafer structure
Solution Approach 2:
The patent creates a composite structure consisting of the thin wafer bonded to the carrier substrate through an adhesive layer. This composite construction combines the light weight and sensing properties of the thin wafer with the mechanical strength and dimensional stability of the carrier, achieving both material reduction and structural integrity
4Quantity of substance
If the wafer is made thin, then the manufacturing cost is reduced, but warpage issues are prone to occur
Solution Approach 1:
The carrier acts as an intermediary support that prevents warpage in thin wafers during manufacturing. By providing a rigid, dimensionally stable base, the carrier compensates for the inherent flexibility and warpage susceptibility of thin wafer materials, maintaining compositional stability throughout processing
5Manufacturing precision
If the wafer is made thin, then the sensing performance is improved, but the sensing area is easily polluted during manufacturing processes
Solution Approach 1:
The patent applies preliminary protection by bonding the wafer to the carrier before manufacturing processes begin. This pre-securing action prevents the thin, vulnerable wafer from moving or contacting污染源 during subsequent processing steps, thereby protecting the sensing area from pollution while maintaining the thin profile needed for sensing performance
6Strength
If the dam element thickness is increased, then the structural strength is improved, but a gap between the glass sheet and chip must be greater
Solution Approach 1:
The patent changes the thickness parameter of the dam element to an optimized range of 20-750 μm, balancing structural strength requirements with the need to minimize gap distance. This parameter optimization is achieved through precision carrier processing that allows thin yet sufficiently strong dam elements to be manufactured reliably
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The controlled thickness of the dam element prevents petal flare defects and warpage issues, improving product yield by ensuring the sensing area is protected and the wafer is securely handled during processing.
Implementation Method 1
The bottom of the carrier is simultaneously impacted and attracted, such that the bottom is separated from the dam element, and a wall surface of the dam element originally connected to the bottom forms a rough surface
Implementation Method 2
An adhesive layer is used to adhere the carrier to a first surface of a wafer
Data Source
AI summary
A chip package includes a chip, an adhesive layer, and a dam element. The chip has a sensing area, a first surface, and a second surface that is opposite to the first surface. The sensing area is located on the first surface. The adhesive layer covers the first surface of the chip. The dam element is located on the adhesive layer and surrounds the sensing area. The thickness of the dam element is in a range from 20 μm to 750 μm, and the wall surface of the dam element surrounding the sensing area is a rough surface.