Semiconductor/Solid-State Device Details TRIZ Cases

Non-woven and woven fibers in a package board stack structure increase bending stiffness to minimize warpage during semiconductor packaging.

Electroplating generates a roughened copper surface that prevents structural delamination between adjacent polymer and copper layers.

Grooves on ceramic substrates ensure stable semiconductor division by controlling crack direction and preventing surface mount component exposure.

A heat-conductive package structure uses conductive sheets and holes to transfer thermal energy from semiconductor components.

A mechanical clip lock secures devices to a printed circuit board using a rigid substrate and semi-rigid arm.

Temperature-controlled deposition of doped TaN films prevents electromigration in sub-22 nm interconnects.

Segmented edge fixing parts anchor semiconductor pads to substrates, preventing roll-up deformation and crack formation during wire bonding.

A chip package design uses a precision-ground dam element to protect the sensing area.

Radiation cross-links printable dielectric material within gap-fill keyholes to prevent material trapping and electrical shorts.

A semiconductor package bonds multiple bumps directly to shared PCB patterns, eliminating separate lands.

A bond pad structure uses a conductor-insulator composite layer to protect conductive regions during semiconductor processing.

Non-orthogonal walls guide die placement to integrate disparate circuit types without requiring high precision equipment.

Physical vapor deposition applies conductive foil to package surfaces, reducing manufacturing complexity and cost while maintaining shielding effectiveness.

Resin sealing protects chip side surfaces during handling, allowing reduced device thickness without causing structural damage.

Bonding an insulating glass or quartz wafer to a silicon device layer reduces parasitic coupling in 5G radio frequency circuits.

A spacer enables direct electrical contact between dice and a substrate through dedicated holes.

Stacked dies use nesting to minimize footprint while managing height constraints.

A polymer stress relief barrier layer bonds metallization to glass interposers.

A method for forming through substrate vias in integrated circuits using wafer bonding and conductive filling.

Mirror-image coil segments with interdigital capacitors offset magnetic flux, reducing mutual coupling without increasing chip area.

A silicon-based insulating layer transports heat away from semiconductor devices using high thermal conductivity materials.

Thermo-compression bonding with a non-conductive film alleviates thermal stress on bumps and prevents delamination in semiconductor packages.

Segmented GaN half-bridge package reduces inductance and parasitic capacitance while maintaining high voltage isolation.

A semiconductor device uses a liquid metal heat conduction component surrounded by a dam to dissipate thermal energy from electronic components.

A semiconductor under bump metallization build-up structure with sloped sidewalls increases metal contact area to enhance solder joint reliability.

A carrier-free semiconductor package integrates a ground layer on the insulating substrate opposite to RF traces.

A semiconductor device uses a high-conductivity heat-dissipation protrusion to move thermal energy from the active element region.

Laser scribe lines enable simultaneous substrate separation, eliminating silicon debris damage to bond pads and improving manufacturing yield.

Thin film layers prevent crack propagation from the conductive plug interface, reducing open circuit risks in three-dimensional integrated packages.

Multi-layer anisotropic conductive film structures prevent particle clustering between adjacent bonding pads.

Replacing wirebonds with conductive clips in a laminated package reduces resistivity, power consumption, and signal latency.

A thermally conductive film couples semiconductor switches to temperature sensors on hybrid circuit boards.

Alternating doped and undoped layers suppress Auger recombination at high currents, maintaining power efficiency without voltage deterioration.

Laser ablation activates embedded metal nanocrystals to enable selective electroless copper deposition on integrated circuit substrates.

Segmented via etching connects thin film resistors through overlapping openings, preventing material destruction during dry etching.

An evaporator uses a cooling medium to absorb heat from electronic assemblies and transform it into electric power.

A temporary carrier lamination process forms embedded copper via-posts directly in an insulating layer to serve as interposing IO channels.

In-situ plasma treatment improves adhesion on seed layer patterns, reducing broken traces during redistribution circuit structure manufacturing.

A multi-tiered integrated circuit package base distributes electrical contacts across stacked tiers to reduce wire length and congestion.

Curved conductive lines in redistribution layers accommodate thermal expansion differences between semiconductor dies and encapsulants.

Selective etching of distinct liner materials prevents electrical shorts between self-aligned gate and source/drain contacts, increasing transistor density.

Orienting elongated bond pads non-parallel to metal clip current paths reduces electrical resistance and eliminates wire bonding loop height variations.

A semiconductor package aligns light emitting elements within individual concave portions to standardize optical axes and improve directional characteristics.

A substrate support member protrudes beyond an organic material-based semiconductor substrate to secure a stand-off and balance deformation restrictions.

Sputtered redistribution layer seeds electroplated under bumped metal to simplify manufacturing while improving interfacial bonding strength.

Roughened insulating layers enhance adhesion for redistribution wirings, preventing delamination during solder bump reflow processes.

A pulse laser forms via holes through an insulating film to prevent metal diffusion.

Replacing metal silicide with a conductive dielectric layer reduces contact resistance in strained FinFET source drain regions.

Redistribution patterns link center and edge power pads via edge vias, reducing parasitic inductance during device scaling.

Segmented packaging zones enable independent component operation and testing, resolving the trade-off between high density and manufacturing complexity.