Silicon-Based Insulating Layer for Power Module Thermal Management
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Solution Overview
Problem
Semiconductor devices face heat-related damage and external vulnerabilities due to inadequate heat transport and protection mechanisms, particularly in power semiconductor devices where conventional cooling methods and mold compounds fail to efficiently manage thermal resistance and environmental influences.
Innovation Solution
A module design incorporating a semiconductor device mounted on a carrier element with a silicon-based insulating layer and optionally a metal oxide layer, which provides high thermal conductivity for efficient heat transport and protection against environmental factors, using deposition methods like CVD or PVD to minimize thermal resistance and enhance mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cooling methods and mold compounds are used, then the semiconductor device is protected against environmental influences, but thermal resistance increases and heat transport efficiency decreases
Solution Approach 1:
The patent employs a composite structure consisting of a silicon-based insulating layer combined with a metal oxide layer. The silicon-based layer provides electrical insulation and forms the base structure, while the metal oxide layer deposited on top enhances thermal conductivity. This composite material approach allows simultaneous achievement of electrical insulation, mechanical protection, and improved heat transport, resolving the contradiction between protection and thermal management.
Solution Approach 2:
The patent changes the material parameters by transitioning from conventional organic mold compounds to an inorganic silicon-based insulating layer with high thermal conductivity. By depositing metal oxide layers using CVD or PVD processes, the thermal conductivity parameter is significantly enhanced while maintaining electrical insulation properties. This parameter change enables efficient heat transport without compromising protective functions.
2Temperature
If elements with high thermal conductivity are provided to connect cooling means and semiconductor device, then heat transport efficiency improves, but device complexity increases
Solution Approach 1:
The silicon-based insulating layer with metal oxide coating serves multiple functions simultaneously: it provides electrical insulation between the semiconductor device and cooling means, offers mechanical protection against environmental influences, and enables efficient heat transport through its high thermal conductivity. This multi-functional design eliminates the need for separate protective layers and thermal interface materials, thereby reducing overall device complexity while achieving superior heat transport.
Solution Approach 2:
The patent merges the functions of electrical insulation, mechanical protection, and thermal conduction into a single integrated layer structure. The silicon-based insulating layer combined with the metal oxide layer creates a unified component that performs all necessary functions, eliminating the need for multiple separate layers and simplifying the overall device architecture.
3Temperature
If silicon-based insulating layer with high thermal conductivity is used, then heat transport improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent replaces mechanical or chemical bonding methods with physical vapor deposition (PVD) or chemical vapor deposition (CVD) processes to form the metal oxide layer on the silicon-based insulating layer. These deposition techniques provide precise control over layer thickness and composition, ensuring consistent thermal conductivity properties while maintaining electrical insulation. The vapor deposition methods inherently provide better precision control compared to conventional lamination or bonding techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The module effectively transports heat away from the semiconductor device, reducing the risk of damage and external influences, while maintaining electrical integrity and providing improved mechanical protection through the use of silicon-based insulating and passivation layers with high thermal conductivity and low thermal resistance.
Implementation Method 1
Elements with a high thermal conductivity should be provided to connect the cooling means and the semiconductor device, in order to support efficient heat transport
Implementation Method 2
using deposition methods like CVD or PVD
Implementation Method 3
using deposition methods like CVD or PVD
Data Source
AI summary
The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the side of the carrier element opposite to the semiconductor device. The invention further concerns a module comprising a semiconductor device, a mold compound at least partly covering the semiconductor device and a silicon-based passivation layer. The silicon-based passivation layer covers at least partly the periphery of the mold compound.