Semiconductor Heat Dissipation Protrusion for Thermal Management
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Solution Overview
Problem
Conventional semiconductor devices face limitations in heat dissipation speed from the active element region to the wiring board due to the fixed thickness of the ground electrode, which restricts the diffusion of heat in the horizontal direction.
Innovation Solution
The semiconductor device incorporates a first heat-dissipation protrusion with higher thermal conductivity than the insulation resin layer, extending from the active element region to the external terminal, and a heat-dissipation medium with higher thermal conductivity than the insulation resin layer, improving heat dissipation efficiency by diffusing heat horizontally and transmitting it through the insulation resin layer to the medium.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the ground electrode is made thick to increase heat diffusion speed in the horizontal direction, then the heat dissipation speed is improved, but the ground electrode cannot be formed in arbitrary thickness due to manufacturing constraints
Solution Approach 1:
The heat dissipation path is segmented into two distinct components: a thick ground electrode for horizontal heat diffusion and a thick heat-dissipation protrusion for vertical heat transmission. This segmentation allows each component to be optimized independently for its specific function, resolving the contradiction between heat dissipation performance and manufacturing constraints.
Solution Approach 2:
The invention transitions from a two-dimensional ground electrode to a three-dimensional structure by adding a vertical heat-dissipation protrusion. This dimensional change enables heat to be dissipated in both horizontal and vertical directions simultaneously, achieving high heat dissipation speed without being constrained by ground electrode thickness alone.
2Productivity
If the ground electrode is made thick to improve heat diffusion, then heat dissipation efficiency is improved, but the device complexity increases
Solution Approach 1:
The heat-dissipation protrusion serves multiple functions: it acts as a thermal conduction path from the active element region to the wiring board, provides mechanical support, and enables vertical heat dissipation. This multi-functionality improves heat dissipation efficiency without proportionally increasing device complexity.
3Reliability
If the ground electrode is made thick to increase heat diffusion speed, then thermal stress is reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The heat dissipation function is extracted from the ground electrode and transferred to a dedicated heat-dissipation protrusion. This extraction allows the ground electrode to maintain its original thin profile for easy manufacturing, while the separate protrusion handles thermal management, reducing both thermal stress and manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the speed of heat dissipation from the active element region to the heat-dissipation medium, overcoming the limitations of conventional designs and reducing variations in electric characteristics by minimizing thermal stress.
Implementation Method 1
a thermal conductivity of the first heat-dissipation protrusion is larger than a thermal conductivity of the insulation resin layer
Implementation Method 2
a thermal conductivity of the heat-dissipation medium is larger than a thermal conductivity of the insulation resin layer
Data Source
AI summary
A semiconductor device including a semiconductor element 1 having an active element region 1a, a plurality of element electrodes 2 formed on a principal face of the semiconductor element, external terminals 6 and 7 connected to one or more element electrodes via connection members 8 and 9, one or more first heat-dissipation protrusions 4 formed on the principal face of the semiconductor element, an insulation resin layer 10 covering the principal face of the semiconductor element and the first heat-dissipation protrusions, and a heat-dissipation medium 11 contacting a face of the insulation resin layer on a side opposite to a side contacting front faces of the first heat-dissipation protrusions. At least a part of the active element region is included in a region below a bottom face of the first heat-dissipation protrusion, the first heat-dissipation protrusion is not connected to the external terminal within the active element region, a thermal conductivity of the first heat-dissipation protrusion is larger than a thermal conductivity of the insulation resin layer, and a thickness of the insulation resin layer from the front face of the first heat-dissipation protrusion to the heat-dissipation medium is thinner than a thickness of the insulation resin layer from the principal face of the semiconductor element to the heat-dissipation medium. Thereby, it is possible to improve the speed of dissipating heat from the active element region of the mounted semiconductor element to the heat-dissipation medium.