Laminated Electric Device Package with Conductive Clips

The patent transitions from planar packaging to three-dimensional stacked packaging, placing the semiconductor device vertically on the substrate rather than laterally. This dimensional change enables shorter interconnect paths while maintaining compact package footprint, directly resolving the contradiction between package size and energy loss.

The patent embeds the semiconductor device within a laminated package structure that integrates multiple layers of interconnect elements and encapsulant material. This nesting approach consolidates interconnection paths within the package volume, reducing external interconnect lengths and associated energy losses.

The patent replaces wirebond mechanical connections with direct metallurgical bonds through the laminated package interconnect elements. This substitution eliminates the high-resistance wirebond interface while maintaining manufacturing feasibility through standard lamination and reflow processes, thereby reducing power consumption.

The patent employs composite interconnect structures within the laminated package, combining conductive metallization layers with dielectric and encapsulant materials. These composite materials provide low-resistance electrical paths while maintaining structural integrity and manufacturability.

The patent utilizes vertical stacking in the third dimension to reduce lateral interconnect distances. By positioning the semiconductor device vertically above the substrate with direct through-silicon via or bump bond connections, signal paths are shortened despite compact package dimensions, eliminating signal latency issues.

The laminated package structure segments the interconnection path into multiple controlled layers with dedicated signal routes. This segmentation allows optimization of each interconnect layer's length and impedance, minimizing overall signal latency while maintaining compact package size.