Semiconductor Chip Pick-Up Device with Rear-Side Destaticizing Mechanism
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Solution Overview
Problem
Conventional destaticizing devices are inefficient in neutralizing charges on the rear surface of semiconductor chips attached to a sheet material, leading to potential scattering or electrostatic breakdown during chip pickup, and blowing ionized air can further cause scattering issues.
Innovation Solution
A pick-up device with a stage capable of transmitting destaticizing electromagnetic waves, a jacking-up pin for lifting the chip, and a destaticizing mechanism that irradiates the rear surface of the chip through the sheet material, eliminating the need for wind-based destaticization methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional destaticizing devices are used to neutralize charge around the semiconductor chip, then charge neutralization is achieved to some extent, but the rear surface of the semiconductor chip cannot be efficiently destaticized
Solution Approach 1:
Instead of destaticizing from the upper or lateral side as in conventional devices, this invention inverts the approach by destaticizing from the rear side of the semiconductor chip. The destaticizing mechanism is positioned to irradiate the rear surface directly, allowing effective charge neutralization on the previously inaccessible rear surface where peeling charge is generated between the chip and sheet material.
2Reliability
If ionized air is blown to the rear surface of the semiconductor chip for destaticization, then charge neutralization is achieved, but the semiconductor chip may be scattered
Solution Approach 1:
This invention replaces the mechanical blowing method (using ionized air flow) with an electromagnetic radiation method. The destaticizing mechanism uses electromagnetic waves to neutralize charge on the rear surface without physical contact or air flow, thereby eliminating the harmful effect of chip scattering while achieving effective charge neutralization.
3Productivity
If the rear surface of the semiconductor chip is not efficiently destaticized, then the pick-up process can proceed, but the semiconductor chip may be scattered or electrostatically broken down
Solution Approach 1:
The invention applies preliminary destaticization action to the rear surface before the pick-up process. By irradiating the rear surface with electromagnetic waves from the destaticizing mechanism positioned behind the sheet material, charge is neutralized in advance, preventing subsequent scattering or electrostatic breakdown during the pick-up operation and ensuring chip integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively neutralizes electrostatic charges on the rear surface of semiconductor chips without scattering them, preventing electrostatic breakdown and ensuring safe chip pickup.
Implementation Method 1
it is also conceivable to blow ionized air generated by corona discharge to the rear surface of the semiconductor chip
Implementation Method 2
a destaticizing mechanism destaticizing charge generated between the semiconductor chip and the sheet material by making the destaticizing electromagnetic wave pass through the sheet material from the rear side of the stage and irradiate a rear surface of the semiconductor chip
Data Source
AI summary
A pick-up device 10 for picking up a semiconductor chip 100 attached to a front surface of a sheet material 110 is provided with: a stage 12 that includes a material a part or the entirety of which is capable of transmitting a destaticizing electromagnetic wave having an ionization effect and that attracts and holds a rear surface of the sheet material 110; a jacking-up pin 26 for jacking up the semiconductor chip 100 from the rear side of the stage 12; and a destaticizing mechanism 20 that destaticizes charge generated between the semiconductor chip 100 and the sheet material 110 by irradiating the rear surface of the semiconductor chip 100 with the destaticizing electromagnetic wave that is made to pass through the sheet material 110 from the rear side of the stage 12.


