Semiconductor Chip Through Electrode Repair via Control Signals
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Solution Overview
Problem
In 3D semiconductor devices, the existing TSV (through silicon via) method lacks efficient repair mechanisms for failed through electrodes, leading to inefficiencies in maintaining electrical coupling between stacked semiconductor chips.
Innovation Solution
The semiconductor chip incorporates a repair mechanism that replaces unidirectional and bidirectional through electrodes using transfer control signals, allowing for the switching of failed electrodes with functional ones during write and read operations, utilizing repair control circuits and path control circuits to manage signal transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If TSV method is used to vertically pass through chips for electrical coupling, then area efficiency is improved, but repair capability deteriorates
Solution Approach 1:
The through electrode system is segmented into multiple independent through electrodes (first through electrode, second through electrode, third through electrode) that can be individually controlled. This segmentation enables selective activation of functional electrodes while isolating failed ones, providing repair capability without requiring physical access to the TSV structures.
Solution Approach 2:
The system dynamically switches between different through electrodes based on their operational status. Control logic dynamically selects which through electrode to activate for signal transfer, enabling the system to adapt to failures and maintain functionality. This dynamic switching provides repair capability while maintaining the compact TSV architecture.
2Productivity
If multiple through electrodes are used for stacking semiconductor devices, then integration density is improved, but system complexity increases
Solution Approach 1:
Multiple through electrodes serve universal functions of electrical coupling and signal transfer between stacked chips. The control mechanism universally manages all through electrodes through a standardized interface, allowing the system to handle increased integration density without proportionally increasing management complexity. Each through electrode can be activated based on operational needs.
Solution Approach 2:
The system incorporates feedback mechanisms that monitor the operational status of each through electrode. Based on this feedback, the control logic automatically adjusts which through electrodes are active, managing complexity through intelligent control rather than requiring complex physical structures. This feedback-driven approach enables high integration density with manageable system complexity.
Data Source
AI summary
A semiconductor chip includes a first semiconductor device and a second semiconductor device stacked and coupled through a unidirectional through electrode and a plurality of bidirectional through electrodes, wherein a through electrode in which a failure has occurred among the unidirectional through electrode and the plurality of bidirectional through electrodes is replaced based on a plurality of transfer control signals. The plurality of transfer control signals including failure information on the unidirectional through electrode and the plurality of bidirectional through electrodes.