Semiconductor Chip Warpage Prevention Fence Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor packages face challenges in maintaining thickness reduction without warping or twisting, which can lead to manufacturing defects due to the grinding process used to decrease their volume.
Innovation Solution
A semiconductor package design that includes through-electrodes and a warpage prevention part, formed as a fence along the edge of the semiconductor chip's surface, which connects to a substrate, preventing warping and twisting by providing structural support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the rear surface of the wafer is ground down to decrease the thickness of semiconductor chips, then the volume of semiconductor packages is reduced, but the wafer or semiconductor chips become likely to be warped or twisted
Solution Approach 1:
The wafer is divided into multiple semiconductor chips through scribe lines, and the warpage prevention part is formed along these scribe line regions. This segmentation allows the warpage prevention structure to be integrated into the chip structure without significantly increasing the overall volume, while effectively counteracting warpage at the boundaries between chips.
Solution Approach 2:
The warpage prevention part extends in the vertical dimension (upward from the second surface) to a height that provides structural support against warpage. By adding this vertical dimension to the otherwise thin chip structure, the chip gains increased rigidity and resistance to warping while maintaining minimal increase in overall package volume.
2Length of moving object
If the thickness of the semiconductor chip is decreased through grinding, then the semiconductor package becomes more compact, but the chip becomes more susceptible to warping and twisting
Solution Approach 1:
The warpage prevention part is specifically positioned along the scribe line regions where warpage is most likely to occur, rather than uniformly distributing material throughout the chip. This localized reinforcement provides maximum structural support where needed while minimizing the overall volume increase of the chip.
Solution Approach 2:
The warpage prevention part is formed by depositing a different material (such as metal or ceramic) onto the scribe line regions of the semiconductor chip. This composite structure combines the electrical and functional properties of the semiconductor material with the mechanical strength and warpage resistance of the deposited material, achieving both thinness and structural stability.
3Adaptability or versatility
If through-electrodes are formed to pass through the semiconductor chip body, then electrical connection is achieved, but the chip structure becomes more complex and more prone to warping
Solution Approach 1:
The warpage prevention part and through-electrodes are integrated into a single unified structure, where the warpage prevention part serves dual functions: preventing warpage and providing mechanical support for the through-electrodes. This merging reduces the number of separate components and simplifies the overall chip structure despite the added functionality.
Solution Approach 2:
The warpage prevention part formed along the scribe lines serves multiple functions simultaneously: it prevents warpage, provides mechanical reinforcement for the thin chip structure, and serves as a support structure for mounting through-electrodes. This multi-functionality reduces the need for additional separate components, thereby reducing overall structural complexity.
Data Source
AI summary
A semiconductor package and a method for manufacturing the same is provided for minimizing or preventing warpage and twisting of semiconductor chip bodies as a result of thinning them during gringing. The semiconductor package includes a semiconductor chip body and a substrate. The semiconductor chip body has a first surface, a second surface facing away from the first surface, through-electrodes which pass through the semiconductor chip body and project from the second surface, and a warpage prevention part which projects in the shape of a fence along an edge of the second surface. The substrate has a substrate body and connection pads which are formed on an upper surface of the substrate body, facing the second surface, and which are connected with the projecting through-electrodes.


