Semiconductor/Solid-State Device Details TRIZ Cases

Stacked wiring layers in a substrate recess eliminate expensive lead molds and reduce manufacturing costs.

A semiconductor device connects fine interconnections to wider extension wiring via a via hole, resolving disconnection caused by uneven exposure resolution.

Infrared curing of adhesive layers bonds micro devices simultaneously, eliminating solder reflow steps that increase manufacturing time and cost.

Screen printing deposits thick copper layers in high power areas and thin layers elsewhere on ceramic substrates to resolve thermal dissipation issues.

Segmented electrodes in an organic light-emitting device prevent current crowding and temperature rises by isolating local faults.

A semiconductor device uses a recessed metal layer on an insulated circuit board to accommodate bonding material at element corners.

A lead frame manufacturing method uses etched conductive foils to create dense lead networks.

Segmented pick-up heads form fluidic membranes to handle micro-LEDs, eliminating physical damage and electrostatic discharge risks during parallel transfer.

A spacer divides the cooling case inlet and outlet to guide liquid flow through the heat sink.

Thermosetting resin matching adhesive thermal expansion prevents stress concentration and warpage in stacked semiconductor devices.

A 3D integrated circuit package uses through conductors in encapsulation holes to mount a substrate for increased connectivity.

Merges vertical-transport transistors and electrical fuses on a single substrate to resolve integration complexity.

Asymmetric conductive bumps with varying widths enable uniform etchant penetration across semiconductor chip pads.

A planar stacked semiconductor package design using insulation adhesive and bonding wires to reduce the overall footprint of the chip assembly.

A composite etchant with organic phosphonic acid prevents nickel wiring corrosion and bump electrode oxidation while achieving precise copper removal.

Segmented heatsinks with U-shaped coolant channels transfer heat through dielectric layers, resolving electrical insulation conflicts.

A segmented capture pad structure with insulator islands disperses current flow across the interface between through silicon vias and metal pads.

A package module uses metal shielding layers between isolated blocks to protect semiconductor chips from electromagnetic interference.

An aluminum oxide composite plate with an adhesive layer prevents carrier warping caused by asymmetric build-up structures in embedded semiconductor packages.

Replacing discrete barrier and adhesion layers with a single graded metallic alloy maximizes the volume fraction of high conductivity metal fill materials.

Segmented conductive pattern layer eliminates costly adhesives to achieve fine-pitch wiring precision.

A display device uses a side terminal and conductive side pad to connect external driving circuits.

Graded doping in the drift region reduces on resistance and prevents electric field concentration, enabling high current driving capacity.

An enlarged case portion counteracts joining material contraction forces, preserving cooling plate parallelism and thermal performance.

A 3D semiconductor device places antifuse-based programming circuitry in an attic level above functional transistor layers to enable flexible interconnects.

Concentric conductors in a single via minimize parasitic capacitance while maintaining electrical reliability.

Reinforced conductors and wire bonding join through electrodes with thin film wiring, preventing disconnections caused by cavity irregularities.

Projecting elements on a carrier substrate enable reliable electrical connections between the substrate and semiconductor chip contact pads.

A routing tile design minimizes spatial overlap between adjacent interconnect wires to reduce capacitive coupling.

One-sided slimming regions and optimized pass transistor placement resolve the trade-off between integration density and reliability in 3D nonvolatile memory.

Electrostatic discharge protection pad overlaps electrode pads to dissipate static electricity and prevent semiconductor chip damage.

Resin projections maintain spacing between stacked semiconductor chips, preventing micro-bump crush and open failures during pressure bonding.

A conductive portion on a dielectric layer bridges the gate structure and second doped region to reduce impedance.

Oxidizing the barrier layer within semiconductor vias forms a composite dielectric structure that withstands insulator field breakdown under high voltage.

A multimode thermal switching heatsink uses liquid metal expansion to dynamically adjust contact area and enhance heat dissipation.

A conductive clip with flexible leads loops back under the clip body to provide a robust interconnection between an IC die and a leadframe.

A substrate shielding layer surrounds a semiconductor chip and contacts an exposed ground surface to block electromagnetic interference.

Embedding electrical pathways within the laminate substrate reduces system board spacing requirements.

A power transistor uses a conductive field plate to enhance the reduced surface field effect and lower drain-to-source on-resistance.

Offsetting laser convergence points controls crack extension and suppresses front surface damage during silicon substrate cutting.

A heat dissipation bridge uses ionic wind to cool heating elements in electronic devices.

An insulating substrate with a chip in an opening and a sealing layer balance thermal expansion to reduce stress and prevent electrode disconnection.

Cavities in the rear surface of a first semiconductor chip accommodate a second element, reducing volume and interconnection complexity.

A module frame directly connects functional device electrodes to minimize wiring resistance and inductance.

Hydrophobic microstructures on a substrate block underfill spread near the die mounting region.

Plasma oxidation transforms conductive gate residue into an insulating oxide layer, eliminating unintended electrical paths between isolated MOSFET elements.

A rigid structural part fixes warped PCBs while elastic connectors bridge wafer TSV pads to chiplets, reducing warpage by 90%.

Interlocking quilt package nodules protrude beyond microchip edges to enable automated single-orientation assembly.

A deformable bonding head applies uniform pressure to semiconductor chips of varying heights on flexible substrates.

Conformal oxide and nitride films prevent metal diffusion in hourglass-shaped TGVs, ensuring complete coverage for reliable high-frequency devices.

Segmented buffer plates with graded thermal expansion coefficients alleviate thermal stress while maintaining high heat conductivity in power modules.

An epoxy-acrylic rubber adhesive withstands thermal stress at 125°C, preventing cracks in the bonding layer during device operation.

Dual-substrate semiconductor package design enables flip-chip mounting and direct-bonded metal interconnects.

A semiconductor package applies tensile stress via a bimetal substrate to widen lattice gaps and restore carrier mobility at elevated temperatures.

A molding member with a top surface higher than the semiconductor substrate creates a hooking structure that laterally surrounds the die.

A semiconductor fabrication method uses a protective cap layer on lower interconnections to enable reliable air gap formation between signal lines.

Lateral openings expose conducting pads on chip package substrates, reducing aspect ratios and easing material deposition.

Thicker exposed middle conductive plate dissipates heat to suppress thermal expansion and distortion in stacked semiconductor devices.

A dual side cooling integrated power device module uses thermal clips attached to a leadframe for enhanced heat dissipation.

CVD silica barrier over polymer encapsulant prevents long-term moisture degradation in MEMS packages.

Peripheral and central dummy patterns surround aluminum pads to reduce erosion during plasma etching.

A CoWoS interposer fuse disconnects faulty capacitors from power and ground nodes to isolate defects.

Laser patterning a non-photosensitive passivation layer eliminates photolithography steps, reducing manufacturing complexity and cost.

A word line selection circuit divides memory strings into zones and groups to minimize switch circuits.

A multiplexed configuration terminal merges supply and ground connections to simplify device setup.

Inclined contact terminals maintain uniform interface area on printed circuit boards, resolving pad alignment precision issues.

An interlaced reciprocation stacking method places spacers between chips to alter wire bonding positions, reducing chip cracking risks during manufacturing.

Dummy patterns in corner regions compensate for thermal expansion differences to prevent warpage.

Integrated heater prevents condensation on heat exchangers during standby, protecting power semiconductors from moisture damage.

Backside vias couple a redistribution layer to front-side circuits, reducing routing complexity while maintaining high device density.

A semiconductor device heat dissipation member integrates an electromagnetic wave absorption sheet and a heat conduction plate to manage thermal energy.

Inclined engagement surfaces in cooling plate recesses prevent sealing member separation and moisture ingress, maintaining device insulation.

Carbon fiber composite avionics chassis housing reduces weight by 40 percent while maintaining electromagnetic shielding and heat dissipation.

High dielectric breakdown sealing materials prevent dielectric breakdown while minimizing manufacturing costs from large relaxation portions.

A stacked semiconductor memory device uses dual ECC circuits to detect and correct transmission errors across silicon via lines.

An alumina coating protects aluminum nitride fillers in a cement composite, preventing chemical reactions that degrade thermal conductivity and reliability.

Patterning a metal sheet with openings allows bonding to two-terminal devices, then cutting creates individual electrode connections.

A semiconductor chip uses a fence-shaped warpage prevention part along its edge to maintain structural integrity during thinning processes.

Fluid pressure in a hollow body distributes clamping force homogeneously across large semiconductor surfaces.

A two-part lid system with a removable cover plate enables direct heat sink attachment to the semiconductor die.

Spacer recesses self-position semiconductor elements and ribbons, eliminating thickness non-uniformity that degrades quality and reduces product lifespan.

Pre-formed vias through the encapsulation layer simplify stacking alignment and reduce device thickness while maintaining electrical performance.

Conductive members between electrodes and peripheral regions suppress leakage current, stabilizing operation under high temperature and humidity.

Varying thickness metallic traces on a baseplate eliminate wire bonds, resolving the trade-off between ease of manufacture and device complexity.

An anti-fuse structure integrates a bottom conductive layer, insulating layer, and top conductive layer over copper interconnects.

Substrate grooves house magnetic cores and conductive windings, enabling large inductance values within a compact monolithic integrated circuit footprint.

Offsetting the uppermost semiconductor die along the x-axis distributes shear forces and prevents cracking during encapsulation of thin dies.

Single laser crystallization creates poly silicon layers with different crystal grain sizes to resolve mura issues and improve luminance uniformity.

Selective PMMA encapsulation blocks water penetration while allowing hydrogen permeation, preserving sensor sensitivity in humid environments.

Filtered UV light activates a precursor to repair low-k dielectric surfaces, reducing hydrophilic traits and leakage currents.

A multi-layer substrate embeds circuit traces within dielectric structures to enable precise fine-pitch routing.

Inwardly displaced connection electrodes create counteracting stress that mitigates sealing resin contraction, suppressing frame deformation.

Integrating a resistor and capacitor in the BEOL process reduces parasitic capacitance and manufacturing complexity by sharing interconnect layers.

A dual-layer insulating film structure enhances solder wetness and contact reliability, preventing non-wet solder defects during reflow.

Asymmetric hexagonal packing and local quality rules isolate Rx pairs with ground connections to maintain signal integrity at high densities.