Semiconductor/Solid-State Device Details TRIZ Cases

Stacked wiring layers in a substrate recess eliminate expensive lead molds and reduce manufacturing costs.

A semiconductor device connects fine interconnections to wider extension wiring via a via hole, resolving disconnection caused by uneven exposure resolution.

Infrared curing of adhesive layers bonds micro devices simultaneously, eliminating solder reflow steps that increase manufacturing time and cost.

Screen printing deposits thick copper layers in high power areas and thin layers elsewhere on ceramic substrates to resolve thermal dissipation issues.

Segmented electrodes in an organic light-emitting device prevent current crowding and temperature rises by isolating local faults.

A semiconductor device uses a recessed metal layer on an insulated circuit board to accommodate bonding material at element corners.

A lead frame manufacturing method uses etched conductive foils to create dense lead networks.

Segmented pick-up heads form fluidic membranes to handle micro-LEDs, eliminating physical damage and electrostatic discharge risks during parallel transfer.

A spacer divides the cooling case inlet and outlet to guide liquid flow through the heat sink.

Thermosetting resin matching adhesive thermal expansion prevents stress concentration and warpage in stacked semiconductor devices.

A 3D integrated circuit package uses through conductors in encapsulation holes to mount a substrate for increased connectivity.

Merges vertical-transport transistors and electrical fuses on a single substrate to resolve integration complexity.

Asymmetric conductive bumps with varying widths enable uniform etchant penetration across semiconductor chip pads.

A planar stacked semiconductor package design using insulation adhesive and bonding wires to reduce the overall footprint of the chip assembly.

A composite etchant with organic phosphonic acid prevents nickel wiring corrosion and bump electrode oxidation while achieving precise copper removal.

Segmented heatsinks with U-shaped coolant channels transfer heat through dielectric layers, resolving electrical insulation conflicts.

A segmented capture pad structure with insulator islands disperses current flow across the interface between through silicon vias and metal pads.

A package module uses metal shielding layers between isolated blocks to protect semiconductor chips from electromagnetic interference.

An aluminum oxide composite plate with an adhesive layer prevents carrier warping caused by asymmetric build-up structures in embedded semiconductor packages.

Replacing discrete barrier and adhesion layers with a single graded metallic alloy maximizes the volume fraction of high conductivity metal fill materials.

Segmented conductive pattern layer eliminates costly adhesives to achieve fine-pitch wiring precision.

A display device uses a side terminal and conductive side pad to connect external driving circuits.

Graded doping in the drift region reduces on resistance and prevents electric field concentration, enabling high current driving capacity.

An enlarged case portion counteracts joining material contraction forces, preserving cooling plate parallelism and thermal performance.

A 3D semiconductor device places antifuse-based programming circuitry in an attic level above functional transistor layers to enable flexible interconnects.

Concentric conductors in a single via minimize parasitic capacitance while maintaining electrical reliability.

Reinforced conductors and wire bonding join through electrodes with thin film wiring, preventing disconnections caused by cavity irregularities.

Projecting elements on a carrier substrate enable reliable electrical connections between the substrate and semiconductor chip contact pads.

A routing tile design minimizes spatial overlap between adjacent interconnect wires to reduce capacitive coupling.

One-sided slimming regions and optimized pass transistor placement resolve the trade-off between integration density and reliability in 3D nonvolatile memory.

Electrostatic discharge protection pad overlaps electrode pads to dissipate static electricity and prevent semiconductor chip damage.

Resin projections maintain spacing between stacked semiconductor chips, preventing micro-bump crush and open failures during pressure bonding.

A conductive portion on a dielectric layer bridges the gate structure and second doped region to reduce impedance.

Oxidizing the barrier layer within semiconductor vias forms a composite dielectric structure that withstands insulator field breakdown under high voltage.

A multimode thermal switching heatsink uses liquid metal expansion to dynamically adjust contact area and enhance heat dissipation.

A conductive clip with flexible leads loops back under the clip body to provide a robust interconnection between an IC die and a leadframe.

A substrate shielding layer surrounds a semiconductor chip and contacts an exposed ground surface to block electromagnetic interference.

Embedding electrical pathways within the laminate substrate reduces system board spacing requirements.

A power transistor uses a conductive field plate to enhance the reduced surface field effect and lower drain-to-source on-resistance.

Offsetting laser convergence points controls crack extension and suppresses front surface damage during silicon substrate cutting.

A heat dissipation bridge uses ionic wind to cool heating elements in electronic devices.

An insulating substrate with a chip in an opening and a sealing layer balance thermal expansion to reduce stress and prevent electrode disconnection.

Cavities in the rear surface of a first semiconductor chip accommodate a second element, reducing volume and interconnection complexity.

A module frame directly connects functional device electrodes to minimize wiring resistance and inductance.

Hydrophobic microstructures on a substrate block underfill spread near the die mounting region.

Plasma oxidation transforms conductive gate residue into an insulating oxide layer, eliminating unintended electrical paths between isolated MOSFET elements.

A rigid structural part fixes warped PCBs while elastic connectors bridge wafer TSV pads to chiplets, reducing warpage by 90%.

Interlocking quilt package nodules protrude beyond microchip edges to enable automated single-orientation assembly.

A deformable bonding head applies uniform pressure to semiconductor chips of varying heights on flexible substrates.