Electronic Component Conductive Portion Gate Drain Impedance
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Solution Overview
Problem
Conventional electronic components with shallow trench isolations (STI) embedded in substrates increase the distance between the gate structure and the drain, leading to higher impedance between the two, which affects voltage endurance.
Innovation Solution
A semiconductor component design featuring a dielectric layer formed above the substrate surface, positioned between the first and second doped regions, and a conductive portion on this dielectric layer, which reduces the length of the current path and impedance between the gate structure and the second doped region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If shallow trench isolations (STI) are embedded in the substrate, then voltage endurance is improved, but impedance between gate structure and drain increases
Solution Approach 1:
A conductive portion is introduced as an intermediary element between the gate structure and the second doped region (drain). This conductive portion is positioned on the dielectric layer and establishes a direct conductive path that bypasses the high-impedance region created by the STI, thereby reducing overall impedance while preserving voltage endurance
Solution Approach 2:
The conductive portion is placed on the dielectric layer above the substrate surface, utilizing the vertical dimension to create a shortcut path. This three-dimensional arrangement allows the conductive portion to bridge between gate and drain without increasing the lateral distance, effectively reducing impedance through spatial reconfiguration
2Reliability
If shallow trench isolations (STI) are embedded in the substrate, then voltage endurance is improved, but the length between gate structure and drain increases
Solution Approach 1:
The conductive portion utilizes the vertical dimension by being positioned on the dielectric layer above the substrate, creating a shortcut path that reduces the effective current path length between gate and drain without altering the lateral STI structure that provides voltage endurance
Data Source
AI summary
The electronic component includes a semiconductor substrate, a first doped region, a second doped region, a gate structure, a dielectric layer and a conductive portion. The semiconductor substrate has an upper surface. first doped region embedded in the semiconductor substrate. The second doped region is embedded in the semiconductor substrate. The gate structure is formed on the upper surface. The dielectric layer is formed above the upper surface and located between the first doped region and the second doped region. The conductive portion is formed on the dielectric layer.