Semiconductor Device Middle Conductive Plate Thermal Expansion
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Solution Overview
Problem
In semiconductor devices with stacked conductive plates and semiconductor chips, uneven thermal expansion due to heat generation by the chips leads to localized distortion and reduced durability, with the middle conductive plate experiencing the most significant temperature rise and expansion.
Innovation Solution
The middle conductive plate is designed with an exposed portion that is thicker than its main portion, allowing for efficient heat dissipation outside the device, and is strategically positioned on the surface of the encapsulant to facilitate cooling, either through natural dissipation or with the aid of coolers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the middle conductive plate is made thinner to reduce overall device thickness, then the device becomes more compact, but the thermal expansion and temperature rise in the middle conductive plate worsen, leading to increased distortion and reduced durability
Solution Approach 1:
The middle conductive plate is designed with non-uniform thickness: the first region (in contact with first semiconductor chip) has a first thickness, while the second region (in contact with second semiconductor chip) has a second thickness greater than the first thickness. This local variation in thickness allows the plate to better manage thermal expansion locally in the region experiencing higher temperatures, thereby reducing distortion while maintaining overall device compactness.
Solution Approach 2:
The thickness parameter of the middle conductive plate is changed from a uniform value to a variable value across different regions. Specifically, the thickness in the second region is increased relative to the first region, creating a gradient structure that adapts to the thermal load distribution and suppresses thermal expansion-induced distortion.
2Reliability
If the middle conductive plate is made thicker to suppress thermal expansion, then durability improves, but the overall device thickness increases and compactness is lost
Solution Approach 1:
Instead of uniformly increasing the thickness of the entire middle conductive plate, the invention applies increased thickness only to the second region that experiences higher thermal loads. This localized thickening provides the necessary thermal expansion suppression where needed while keeping other regions thinner, thus maintaining overall device compactness.
Solution Approach 2:
The middle conductive plate is segmented into at least two regions with different thickness characteristics. The first region has a smaller thickness while the second region has a larger thickness, allowing each segment to be optimized for its specific functional requirements - electrical connection and thermal management.
3Ease of manufacture
If the middle conductive plate has uniform thickness, then manufacturing is simpler, but uneven thermal expansion occurs due to heat generation from semiconductor chips, causing distortion
Solution Approach 1:
The middle conductive plate is designed with different thickness values in different regions to match the local thermal conditions. The first region has a first thickness and the second region has a second thickness, creating a structure that compensates for uneven heat generation from the semiconductor chips and suppresses thermal distortion.
Solution Approach 2:
The middle conductive plate employs an asymmetric thickness distribution rather than a symmetric uniform thickness. The thickness varies between the first region and second region, creating an asymmetric structure that better handles the asymmetric thermal loads from the semiconductor chips on either side.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses temperature rises in the middle conductive plate, reducing thermal expansion and enhancing the durability of the semiconductor device by ensuring efficient heat dissipation and simultaneous cooling of adjacent components.
Implementation Method 1
heat from the middle conductive plate can easily be dissipated outside due to the middle conductive plate being exposed outside on the surface of the encapsulant
Implementation Method 2
heat from the middle conductive plate can easily be dissipated outside
Implementation Method 3
temperatures of the three conductive plates adjacent thereto also rise, and thermal expansion occurs in the respective conductive plates
Data Source
AI summary
A semiconductor device may include: an upper conductive plate, a middle conductive plate, and a lower conductive plate which are stacked on each other; a first semiconductor chip located between the upper and middle conductive plates and electrically connected to both the upper and middle; a second semiconductor chip located between the middle and lower conductive plates and electrically connected to both the middle and lower conductive plates; and an encapsulant encapsulating the first and second semiconductor chips and integrally holding the upper, middle and lower conductive plates. The middle conductive plate may include a main portion joined to the first and second semiconductor chips within the encapsulant and an exposed portion exposed outside on a surface of the encapsulant. A thickness of the exposed portion may be equal to or greater than a thickness of the main portion.