Chip-to-Waveguide RF Transition Using Patch-Via Broadband Resonance
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Solution Overview
Problem
Existing conversion technologies for radio frequency signals from chip packages to waveguides face challenges in achieving low loss and wide impedance bandwidth due to processing errors in slit structures, leading to frequency offset issues.
Innovation Solution
A conversion apparatus with a multi-layer metal structure, including a first metal layer as a ground, a second metal layer for RF traces, a third metal layer for patch elements, and metallization vias, forming a broadband resonant structure through capacitance and inductance characteristics, replacing the slit-based capacitance, and using a connection structure with a waveguide cavity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a slit structure is used to provide capacitance characteristic in the conversion apparatus, then the capacitance can be introduced, but processing errors in the slit lead to frequency offset and narrow bandwidth
Solution Approach 1:
The patent removes the problematic slit structure from the patch element and extracts its capacitance function to a separate capacitor component. This extraction eliminates the frequency offset issue caused by slit processing errors while maintaining the necessary capacitance characteristic for resonance, thereby resolving the contradiction between manufacturing precision and bandwidth.
Solution Approach 2:
The patent introduces a separate capacitor as an intermediary component to provide the capacitance characteristic that was previously integrated into the slit structure. This mediator approach allows for precise capacitance control without the manufacturing errors associated with slits, achieving both high frequency accuracy and wide impedance bandwidth.
2Ease of manufacture
If the conversion apparatus uses a simple structure, then the ease of manufacture is improved, but achieving low loss and wide impedance bandwidth becomes difficult
Solution Approach 1:
The patent segments the conversion apparatus into distinct functional components: a patch element without slits, separate capacitors, and metallization vias. This segmentation simplifies the manufacturing of each component while maintaining the overall RF performance through proper assembly, resolving the contradiction between ease of manufacture and reliability.
Solution Approach 2:
The patent changes the design parameters by eliminating the complex slit geometry and replacing it with simple capacitor components with well-defined electrical characteristics. This parameter change allows for easier manufacturing while achieving the desired low loss and wide impedance bandwidth through controlled capacitance values and proper resonant circuit design.
3Manufacturing precision
If slit-based capacitance is used in the patch element, then the capacitance characteristic is achieved, but processing errors cause frequency offset
Solution Approach 1:
The patent extracts the capacitance function from the complex slit-based patch element structure and implements it using separate, simpler capacitor components. This extraction maintains precise capacitance control while significantly simplifying the patch element geometry, thereby resolving the contradiction between manufacturing precision and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Ensures low loss and wide impedance bandwidth with improved RF performance by avoiding frequency offset, maintaining high transmission efficiency across a broad frequency range.
Implementation Method 1
a capacitance formed between the RF trace on the second metal layer and the patch element on the third metal layer introduces a capacitance characteristic
Implementation Method 2
At least one conversion metallization via is disposed on one end of the RF trace close to the patch element, for connecting the RF trace and the patch element and introducing an inductance characteristic
Implementation Method 3
A plurality of shielding metallization vias is ground vias around the patch element and the RF trace for guiding RF signal propagation
Data Source
AI summary
The present application discloses a conversion apparatus from a chip package to a waveguide, a radio frequency apparatus and a radar apparatus. The conversion apparatus includes: a first metal layer as a metal ground layer, a second metal layer, a third metal layer, a shielding metallization via, a conversion via, and a dielectric substrate disposed between different metal layers to function as a support; the second metal layer is configured to lay an RF trace; the third metal layer is configured to dispose a patch element; a capacitance formed between the RF trace and patch element introduces capacitance characteristic; multiple shielding metallization vias are ground vias around the patch element and RF trace for guiding RF signal propagation; at least one conversion metallization via is disposed on one end of the RF trace close to the patch element, for connecting the RF trace and patch element and introducing inductance characteristic.