CIGO Nanoparticle Thin Films via Layer-by-Layer Dip Coating

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current methods for producing high-quality copper-indium-gallium chalcogenide films for photovoltaic applications are costly and not scalable, as they often require vacuum processing or hazardous solvents, limiting their potential for commercialization and large-scale manufacturing.

Innovation Solution

A layer-by-layer deposition method using copper-indium-gallium oxide nanoparticles produced via flame spray pyrolysis, which are surface-modified with polyamines and electrostatically adsorbed onto substrates, followed by thermal oxidation and sulfurization to form copper-indium-gallium sulfide films, enabling a low-cost, scalable, and non-vacuum process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If vacuum techniques such as sputtering and co-evaporation are used to deposit copper-indium-gallium chalcogenide films, then film quality and composition control are improved, but manufacturing cost and processing complexity increase

Engineering Contradiction:
Improvefilm qualityVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent replaces vacuum-based physical vapor deposition techniques with a chemical solution-based dip-coating method. Instead of using sputtering or co-evaporation equipment, the invention uses aqueous precursor solutions containing copper, indium, and gallium salts that are deposited onto substrates through simple dip-coating, followed by thermal annealing to form the chalcogenide films. This substitution eliminates the need for expensive vacuum equipment while maintaining film quality.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The invention changes the deposition parameters from vacuum-based physical processes to solution-based chemical processes. The precursor solutions contain controlled ratios of metal salts, and the deposition is controlled by dip-coating speed, solution concentration, and annealing temperature, replacing the complex vacuum parameter control with simpler solution chemistry parameters.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If vacuum techniques such as sputtering and co-evaporation are used to deposit copper-indium-gallium chalcogenide films, then composition control is improved, but productivity and scalability worsen

Engineering Contradiction:
Improvecomposition controlVSAvoidthroughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent replaces batch processing vacuum techniques with a continuous dip-coating process. Multiple substrates can be sequentially dipped into precursor solutions in a continuous manner, enabling high-throughput production while maintaining composition control through standardized solution formulations and consistent dip-coating parameters.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The invention creates a universal deposition process that can handle multiple substrate types and sizes using the same dip-coating apparatus and precursor solutions. The method is adaptable to various substrate geometries and can be easily scaled from laboratory to production scale, unlike vacuum techniques that require specific chamber configurations for different substrate types.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If conventional liquid phase methods are used for film deposition, then manufacturing cost is reduced, but use of hazardous solvents increases

Engineering Contradiction:
Improvemanufacturing costVSAvoidhazardous solvents
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The invention changes the solvent parameter from organic solvents to aqueous solutions. The precursor solutions use water as the base solvent with controlled pH and ionic strength, eliminating the need for hazardous organic solvents while maintaining effective deposition. This parameter change reduces manufacturing costs and improves environmental safety.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses inexpensive, easily disposed-of aqueous precursor solutions instead of expensive, hazardous organic solvents that require special handling and disposal procedures. The water-based solutions can be safely discarded after use, eliminating the need for complex solvent recovery systems and reducing manufacturing costs.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method allows for the production of high-quality copper-indium-gallium sulfide films at a lower cost and on a larger scale, compatible with high-throughput manufacturing, using abundant precursors and avoiding hazardous solvents, thus advancing the commercialization of photovoltaic devices.

Implementation Method 1

flame spray pyrolysis

Methodology Applied
Scientific EffectPyrolysis: Pyrolysis

Implementation Method 2

flame spray pyrolysis

Methodology Applied
Scientific EffectCombustion: Combustion

Implementation Method 3

surface-modified with polyamines and electrostatically adsorbed onto substrates

Methodology Applied
Scientific EffectElectrostatic adsorption: Adsorption

Implementation Method 4

thermal oxidation

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS11271124B2Method for fabrication of copper-indium gallium oxide and chalcogenide thin films
Publication Date: 2022.03.08 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY
  • US11271124B2 patent drawing
  • US11271124B2 patent drawing
  • US11271124B2 patent drawing

AI summary

A composition of matter having a coated silicon substrate with multiple alternating layers of polydopamine and polyallylamine bound copper-indium-gallium oxide (CIGO) nanoparticles on the substrate. A related composition of matter having polyallylamine bound to CIGO nanoparticles to form PAH-coated CIGO nanoparticles. A related CIGO thin film made via conversion of layer-by-layer assembled CIGO nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine or polystyrenesulfonate and then in the CIGO-PAH dispersion to fabricate CIGO films as thick as 1-2 microns.