CIM Memory Logic Units Using Conductance Switching
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Solution Overview
Problem
The complexity of multi-voltage operation structures in CIM memory devices increases processing and peripheral circuit complexity, hindering further power consumption reduction and integrability improvements.
Innovation Solution
A memory device with a memory array, bit lines, word lines, and conductance controllable units, where a memory cell group and at least one conductance controllable unit form a logic operation unit, with logic operations determined by the equivalent conductance of the conductance controllable unit, allowing for simplified switching between NAND and NOR logic operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multi-voltage operation structure is used to implement logic operation units with CIM function, then logic operation functionality is achieved, but processing procedure complexity and peripheral circuit complexity increase
Solution Approach 1:
The patent changes the control parameter from multi-voltage operation to single-voltage operation with conductance state variation. The conductance controllable unit switches between different conductance states (first state and second state) under single voltage operation to implement different logic operation functions, thereby reducing circuit complexity while maintaining functionality
Solution Approach 2:
The conductance controllable unit serves multiple functions by switching between different conductance states. A single unit can implement different logic operations (such as NAND and NOR) by changing its conductance state, eliminating the need for separate circuits for different logic functions and reducing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies calculation and peripheral circuit complexity, enabling reduced power consumption and improved integrability in CIM memory devices while maintaining efficient logic operation functionality.
Implementation Method 1
a logic operation function of the logic operation unit is determined by an equivalent conductance of the at least one conductance controllable unit
Data Source
AI summary
A memory device and an operation method thereof are provided. The memory device comprises: a memory array including a plurality of memory cells; a plurality of bit lines coupled to the memory array; a plurality of word lines coupled to the memory array; and a plurality of conductance controllable units coupled to the memory array; wherein a memory cell group and at least one conductance controllable unit among the conductance controllable units form a logic operation unit, and a logic operation function of the logic operation unit is determined by an equivalent conductance of the at least one conductance controllable unit.