Circuit Board Buffer Layer for High-Frequency Adhesion

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Solution Overview

Problem

There is a need for a printed circuit board with a new structure that prevents a decrease in adhesion between the circuit pattern and the insulating layer while reducing the surface roughness of the circuit pattern, which is essential for high-frequency applications to minimize transmission loss.

Innovation Solution

A circuit board with a buffer layer composed of carbon, nitrogen, oxygen, silicon, sulfur, and metal atoms, where the ratios of these elements to copper atoms are specifically controlled within certain ranges, is used between the insulating layer and the circuit pattern to enhance adhesion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If the surface roughness of the circuit pattern is reduced to minimize transmission loss in high-frequency applications, then transmission loss is reduced, but adhesion between the circuit pattern and the insulating layer deteriorates

Engineering Contradiction:
Improvetransmission lossVSAvoidadhesion between circuit pattern and insulating layer
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

A buffer layer is introduced as an intermediary between the circuit pattern and the insulating layer. This buffer layer has specific compositional requirements (ratios of C, H, O, N, Si, S atoms) that enable it to simultaneously provide good adhesion to both the circuit pattern and the insulating layer, while maintaining a smooth surface profile to minimize transmission loss in high-frequency applications.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the chemical composition parameters of the buffer layer by specifying precise ratios of different atoms (C: 5-7 times metal atoms, H: 2-4 times metal atoms, O: 1.1-1.9 times metal atoms, N: 0.5-1.5 times metal atoms, Si: 0.1-0.5 times metal atoms, S: 0.1-0.5 times metal atoms). These parameter changes enable the buffer layer to achieve optimal adhesion and surface smoothness properties.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the surface roughness of the circuit pattern is reduced to prevent skin effect losses, then transmission quality is improved, but the bonding strength between the circuit pattern and insulating layer decreases

Engineering Contradiction:
Improvetransmission quality of high-frequency signalsVSAvoidbonding strength between circuit pattern and insulating layer
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The buffer layer serves as a mediator that decouples the relationship between surface roughness and bonding strength. It provides a smooth interface for signal transmission while chemically bonding to both the circuit pattern and insulating layer, thereby maintaining bonding strength independent of surface roughness.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The buffer layer is a composite material containing multiple elements (metal atoms, carbon atoms, hydrogen atoms, oxygen atoms, nitrogen atoms, silicon atoms, and sulfur atoms) in specific ratios. This composite structure enables simultaneous achievement of smooth surface properties for signal transmission and chemical bonding capabilities for strong adhesion.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS12207404B2Circuit board
Publication Date: 2025.01.21 LG INNOTEK CO LTD
  • US12207404B2 patent drawing
  • US12207404B2 patent drawing
  • US12207404B2 patent drawing

AI summary

A circuit board may include an insulating layer; a circuit pattern disposed above the top surface of or below the bottom surface of the insulating layer; and a buffer layer disposed between the insulating layer and the circuit pattern, the buffer layer comprising carbon atoms, nitrogen atoms, oxygen atoms, silicon atoms, sulfur atoms, and metal atoms. The ratio of the carbon atoms to the metal atoms ((carbon atom/copper atom)*100) is within a range of 5-7; the ratio of the nitrogen atoms to the metal atoms ((nitrogen atom/copper atom)*100) is within a range of 1.5-7; the ratio of the oxygen atoms to the metal atoms ((oxygen atom/copper atom)*100) is within a range of 1.1-1.9; and the ratio of the silicon atoms to the metal atoms ((silicon atom/copper atom)*100) is within a range of 0.5-0.9; and the ratio of the sulfur atoms to the metal atoms ((sulfur atom/copper atom)*100) is within a range of 0.5-1.5.