Cleaning Gas Supply Mechanism for Semiconductor Film Formation
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Solution Overview
Problem
In semiconductor device manufacturing, excessive process gas and reaction by-products are deposited in the exhaust system, leading to decreased yield and productivity due to clogging, and existing cleaning methods require stopping the apparatus, which further reduces productivity.
Innovation Solution
A manufacturing apparatus and method that includes a reaction chamber with a process gas supplying mechanism, a gas discharging mechanism, a supporting member, a cleaning gas supplying mechanism in the outer periphery, and a rotary driving mechanism, where cleaning gas is supplied below the wafer to prevent deposition in the exhaust system without stopping the apparatus, using a mixture of hydrochloric gas and argon as cleaning gas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cleaning is performed by stopping the apparatus and using highly reactive cleaning gas, then deposition removal effectiveness is improved, but productivity significantly decreases and safety risks increase
Solution Approach 1:
The cleaning gas supply mechanism is activated before the wafer reaches the position where depositions would occur in the exhaust system. By supplying cleaning gas in advance to the lower part of the reaction chamber, the system prevents deposition formation rather than removing it after formation, thereby maintaining continuous operation without productivity loss
Solution Approach 2:
The cleaning gas is supplied continuously during the wafer processing operation rather than requiring apparatus shutdown. The cleaning gas supply mechanism operates concurrently with the film formation process, maintaining continuous useful action in both cleaning and manufacturing functions simultaneously
2Reliability
If cleaning gas is supplied from the upper part of the reaction chamber only, then deposition removal in the upper area is improved, but depositions in the exhaust system below the wafer remain untreated
Solution Approach 1:
The cleaning gas supply is divided into two separate mechanisms: one supplying cleaning gas from the upper part of the reaction chamber and another supplying cleaning gas from the lower part below the wafer. This segmentation allows each mechanism to target specific areas - the upper mechanism handles upper chamber depositions while the lower mechanism prevents exhaust system depositions
Solution Approach 2:
The cleaning gas supply approach is extended from a single upper direction to include a lower dimension below the wafer. By adding the cleaning gas supply mechanism at the lower part of the reaction chamber, the system addresses depositions in the exhaust system area that were previously inaccessible to upper-directed cleaning gas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents deposition of reaction by-products in the exhaust system, maintains productivity, and improves yield by continuously operating the film forming apparatus while effectively removing depositions without clogging the system.
Implementation Method 1
supplying cleaning gas in an outer periphery direction below an upper end of the supporting member... using a mixture of hydrochloric gas and argon as cleaning gas... remove a deposition in the reaction chamber
Implementation Method 2
gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber... discharging excessive process gas and a reaction by-product below an outer periphery of the wafer
Implementation Method 3
heating backside of the wafer... heater configured to heat the wafer
Implementation Method 4
rotating the wafer... rotary driving mechanism configured to rotate the wafer
Implementation Method 5
supplying process gas including source gas and carrier gas on a surface of the wafer... forming a film on a surface of the wafer
Data Source
AI summary
A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer.