CMOS Body-Bias Control for Low-Voltage Temperature Stability
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Solution Overview
Problem
Semiconductor devices with CMOS circuits operating at low voltages experience malfunctions and performance deterioration due to temperature changes, as the difference in source-drain currents between PMOS and NMOS transistors increases, leading to potential operational failures.
Innovation Solution
A semiconductor device with a controller that determines malfunctions by comparing the difference in source-drain currents between PMOS and NMOS transistors and adjusts the body-bias voltage to mitigate these differences, potentially replacing transistors with spare circuits if necessary, to maintain optimal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If a CMOS circuit operates at low voltage (near-threshold or sub-threshold voltage), then power consumption is reduced, but malfunction or performance deterioration occurs due to temperature changes
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the body-bias voltage of PMOS and NMOS transistors based on temperature conditions. The controller modifies the body-bias voltage parameter to compensate for temperature-induced threshold voltage shifts, thereby maintaining circuit reliability while operating at low supply voltages.
Solution Approach 2:
The patent implements feedback by continuously monitoring the source-drain current difference between PMOS and NMOS transistors and using this information to adjust the body-bias voltage. The controller compares the actual current difference against a reference value and dynamically adjusts the body-bias voltage to maintain optimal operating conditions, preventing malfunction due to temperature variations.
2Stability of the object's composition
If the body-bias voltage is adjusted to compensate for temperature changes, then performance stability is improved, but device complexity increases due to additional control circuits
Solution Approach 1:
The patent applies self-service by enabling the CMOS circuit to automatically compensate for its own temperature-induced performance degradation. The circuit monitors its own source-drain current characteristics and self-adjusts the body-bias voltage through integrated control logic, eliminating the need for external calibration or complex external control systems.
Solution Approach 2:
The patent implements universality by designing the controller to perform multiple functions: monitoring source-drain current, determining temperature effects, calculating required body-bias adjustments, and controlling the voltage generator. This multi-functional approach consolidates what could be separate complex circuits into a single integrated controller, reducing overall device complexity while maintaining performance stability.
Data Source
AI summary
The inventive concept relates to a semiconductor device including a CMOS circuit and an operation method thereof. A semiconductor device according to an embodiment of the inventive concept includes a semiconductor circuit, a controller, and a voltage generator. The semiconductor circuit operates at a drive voltage to reduce the delay time between input and output as the temperature increases. The controller determines the malfunction of the CMOS circuit based on the difference between the source-drain current of the PMOS transistor and the source-drain current of the NMOS transistor as the temperature changes. The voltage generator generates or adjusts a body-bias voltage applied to the PMOS transistor or the NMOS transistor based on a malfunction determination of the controller. According to the inventive concept, malfunctions and performance deterioration occurring in a CMOS circuit operating at a low voltage may be reduced.