CMOS Image Sensor IR Cut Layer Integration
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Solution Overview
Problem
Existing semiconductor image sensors face challenges in integrating infrared radiation (IR) cut functionality without increasing the size of electronic products, as traditional methods require additional optical lenses or IR shutters, which are difficult to integrate in shrinking electronic devices, while also needing IR functionality in applications like proximity and motion sensors.
Innovation Solution
A semiconductor device and manufacturing method that integrates IR radiation cut layers and IR pixels into a single unit cell or chip, using a CMOS image sensor with a back-side illuminated structure, incorporating an IR pixel with an IR radiation color filter layer, allowing for effective filtering of IR radiation without additional components, thus enhancing image quality and reducing device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional optical lenses or IR shutters are used to filter IR radiation, then image quality is improved by eliminating color biases, but device size increases and integration becomes difficult
Solution Approach 1:
The patent combines the IR cut filter function with the color filter layer into a single integrated structure. The IR cut filter layer is formed as part of the color filter assembly, eliminating the need for separate optical lenses or IR shutters. This merging approach maintains effective IR radiation filtering while significantly reducing device size and improving integrability into compact electronic products.
Solution Approach 2:
The color filter layer is designed to serve multiple functions simultaneously: it performs traditional color filtering for visible light while also incorporating IR cut filtering capability. By making the color filter layer multi-functional, the patent eliminates the need for separate dedicated IR cut components, thereby reducing overall device size while maintaining both color accuracy and IR radiation filtering performance.
2Object-affected harmful factors
If additional optical lenses or IR shutters are added for IR filtering, then IR radiation is effectively blocked, but device complexity increases
Solution Approach 1:
The patent merges the IR cut filter function with the existing color filter layer, reducing the total number of optical components. Instead of adding separate optical lenses or IR shutters, the IR cut filter is integrated into the color filter assembly, thereby maintaining effective IR radiation blocking while reducing device complexity and the number of required components.
Solution Approach 2:
The color filter layer is designed to perform multiple functions: traditional color filtering and IR radiation filtering. This multi-functionality approach allows a single component to replace what would traditionally require multiple separate components, thereby reducing device complexity while maintaining effective IR radiation filtering capability.
3Adaptability or versatility
If separate chips are used for IR functionality in proximity and motion sensors, then IR sensing capability is achieved, but device size increases
Solution Approach 1:
The patent combines the IR cut filter function with the color filter layer into a single integrated structure. The IR cut filter layer is formed as part of the color filter assembly, eliminating the need for separate optical lenses or IR shutters. This merging approach maintains effective IR radiation filtering while significantly reducing device size and improving integrability into compact electronic products.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively filters out IR radiation, improving image quality by eliminating color biases and providing an IR function without the need for additional chips, thereby reducing the size of image sensor modules.
Implementation Method 1
an infrared radiation cut layer formed on the transparent insulating layer and overlying the light sensing devices for filtering out infrared radiation and near infrared radiation
Implementation Method 2
each image sensor element including a photodiode and other elements, to absorb light and convert the sensed light into digital data or electrical signals
Data Source
AI summary
A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.