CMOS Image Sensor Opaque Layer Prevents Metal Line Reflection

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Solution Overview

Problem

CMOS image sensors face image quality degradation due to diffused reflection caused by metal lines obstructing the light path through transparent device isolation layers between microlenses.

Innovation Solution

An opaque layer is introduced on the device protecting layer adjacent to the microlenses to prevent light interference from metal lines, ensuring that the metal lines do not overlap with the photodiodes and thus do not affect incident light.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a transparent device isolation layer is used between microlenses, then light transmission is improved, but diffused reflection from metal lines degrades image quality

Engineering Contradiction:
Improvelight transmissionVSAvoiddiffused reflection
Core Design Contradiction:
Illumination intensityVSObject-affected harmful factors

Solution Approach 1:

An opaque layer is introduced as an intermediary element between the metal lines and the light path. This layer blocks light from reaching the metal lines, preventing diffused reflection while maintaining the transparency of the device isolation layer for necessary light transmission to photodiodes.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The opaque layer is selectively positioned only in regions where metal lines are present and would interfere with light paths to photodiodes. This localized application maintains light transmission in areas where metal lines are absent, preserving overall light transmission efficiency while eliminating harmful reflection only where needed.

Inventive Principle:
Principle #3Local quality

2Object-affected harmful factors

If an opaque layer is added to prevent diffused reflection, then image quality is improved, but device complexity increases

Engineering Contradiction:
Improvediffused reflectionVSAvoidlayer structure
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The opaque layer is integrated into the existing device structure by combining it with the device isolation layer or positioning it within the interlayer dielectric structure. This merging approach adds the anti-reflection function without creating a completely separate structural system, thereby limiting the increase in device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The opaque layer serves multiple functions: it prevents diffused reflection from metal lines, can act as an additional isolation layer, and provides a planar surface for subsequent processing steps. This multi-functionality reduces the need for separate dedicated components, thereby limiting complexity increase.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The opaque layer effectively eliminates diffused reflection, enhancing the image quality by preventing light interference from metal lines, thereby improving the overall performance of the CMOS image sensor.

Implementation Method 1

A microlens 22 is then formed on the device protecting layer 20... A method of fabricating a CMOS image sensor according to the related art is explained with reference to the attached drawing as follows

Methodology Applied
Scientific EffectLight refraction and focusing: Lens

Implementation Method 2

An opaque layer is introduced on the device protecting layer adjacent to the microlenses to prevent light interference from metal lines... The opaque layer effectively eliminates diffused reflection

Methodology Applied
Scientific EffectLight absorption and reflection prevention: Absorption (EM radiation)

Data Source

PatentUS7705378B2CMOS image sensor and fabricating method thereof
Publication Date: 2010.04.27 III HOLDINGS 4 LLC
  • US7705378B2 patent drawing
  • US7705378B2 patent drawing
  • US7705378B2 patent drawing

AI summary

A CMOS image sensor and fabricating method thereof can enhance the quality of the image sensor by preventing unnecessary diffused reflection of light by providing an opaque filter layer next to a microlens. The CMOS image sensor includes a photodiode, an insulating interlayer, a metal line, a device protecting layer, a microlens on the device protecting layer and overlapped with the photodiode, and an opaque layer pattern on the device protecting layer next to the microlens.