Solid-State Devices TRIZ Cases

Vertical stacking of gate structures with shared source drain regions increases memory capacity within fixed wafer area limits.

An SO active layer exerts spin-orbit torque on the reference layer, reducing write error rates and improving data rates in magnetic memories.

Differentiating organic layer dimensions reduces blue light deterioration and extends device lifespan.

A localized opaque layer eliminates diffused reflection from metal lines, resolving the trade-off between light transmission and image purity.

A neuromorphic device uses doped semiconductor regions to imitate synapse excitatory and inhibitory functionalities.

Recessed lead frame areas with curved step structures optimize spacing and improve heat radiation efficiency in light emitting devices.

A light-emitting device uses a thin glass layer between organic resin substrates to transmit visible light while maintaining structural integrity.

Alq3-based second layer captures holes to extend lifetime while maintaining high luminance in red light-emitting elements.

A photodetector with peak spectral sensitivity in the 400 to 500 nm range reduces fluorescent light interference.

A protective member fills the step portion of a conductive support member to prevent electric shorts during chip isolation, improving reliability.

Fine metal mesh patterns in a touch screen panel reduce reflectivity differences while protection layers increase durability.

Replacing silicon with an organic photoelectric conversion layer improves sensitivity while a cover insulating layer reduces current leakage and reset noise.

Screen-printed metal grids lower horizontal resistance to fix uneven light emission across large OLED displays.

A stacked photovoltaic cell module forms an optical resonance cavity to enhance light absorption across multiple layers.

A wafer taper surface enables dicing tape to maintain close contact with the recess boundary, preventing cracks and dust accumulation.

A sacrificial layer shields first electrodes during etching, enabling independent formation of reflective and transmissive anode patterns without cross-damage.

A magnetic tunnel junction manufacturing method uses a mask layer to control oxidation depth during patterning.

A light emitting device combines RGB diodes with a wavelength-conversion means to produce secondary visible light across the spectrum.

Piezoelectric actuators deflect pixel mirrors on organic substrates to adjust viewing angles and maintain image quality during flexing.

A transponder inlay substrate compresses a chip module peripheral edge to create a flush contact surface.

A photomask layout method uses intersecting sacrificial patterns and spacers to define precise hole regions in target layers.

A precisely controlled insulating layer in the spacing region prevents conductive film lifting, resolving reliability issues while maintaining device slimness.

Shared electrode layers reduce mask steps while blocking external light from reaching semiconductor members to prevent current leakage.

Voltage potential injects excess electrons into free standing quantum dots to constrain photon emission and enable precise light intensity modulation.

Graded buffer layers accommodate lattice mismatches to produce thick, crack-free AlxInyGa(1-x-y)N layers without high dislocation density.

Segmented pixels with vertical control electrodes manage charge carriers, resolving the trade-off between high resolution and light conversion efficiency.

Dual reflectors redirect incident light through a substrate to increase the optical path length for photoelectric conversion.

A transparent resin layer extends from a wavelength converting layer to the chip substrate edge, optimizing the optical path for uniform color emission.

Polyimide binder disperses lead monoxide particles to reduce leakage currents and improve chemical stability in medical imaging.

Deep stacked layers make through-hole etching defect-prone; separate preliminary and final etches control depth and preserve memory-cell behavior.

Introducing conductive wires into uncured optoelectronic layers creates serial electrical connections between components.

Segmenting light-emitting layers into areas of different thicknesses widens the microcavity peak range to reduce color shift at oblique viewing angles.

A semiconductor device uses channel layers in common contact with adjacent hole and electron source patterns.

Segmented pixel defining parts cover anode hollowed regions, preventing edge oxidation and etching during OLED manufacturing.

Overlapping touch and light emitting units on one substrate resolve aperture ratio and resolution trade-offs in OLED displays.

A display substrate incorporates a repair electrode overlapping storage lines to restore electrical connections with drain electrodes.

A photosensitive resin composition with a specific aromatic amide structure achieves high solubility and low viscosity in organic solvents.

Bridging tridentate ligands in dinuclear platinum complexes enable tunable blue emission while suppressing Pt-Pt stacking to enhance stability.

Modifying initial wafer layouts enables self-aligned double patterning to resolve fine patterns beyond photolithography limits.

Bismuth-doped phase-change layers enable rapid crystallization in PRAM devices.

Aluminum alloy pixel electrode enables optical resonance for enhanced luminous efficiency in organic light-emitting displays.

A nanoimprinted conductive structure with a specific width ratio distributes electric current across the semiconductor layer.

A stressed dielectric layer transfers mechanical strain to transistor channels, enhancing carrier mobility and drive current.

A low refractive index spacer layer surrounds nanowire LED cladding to redirect trapped photons outward.

An auxiliary conductive line lowers second electrode resistance to prevent brightness non-uniformity and voltage drop in large-size displays.

A double-implant NOR flash memory structure uses a P-doped drain region to enhance electric connection between highly-doped and lightly-doped drain regions.

Segmented light guide cavities direct pixel light to specific converters, preventing color mixture while maintaining high efficiency.