Neuromorphic Device with Doped Regions for Synapse Imitation
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Solution Overview
Problem
Existing neuromorphic devices face challenges with high power consumption, durability issues, and limited integration due to the use of two-terminal elements, which complicates the implementation of excitatory and inhibitory functionalities in synapse arrays, and occupy large areas, making them unsuitable for efficient neural imitation.
Innovation Solution
A neuromorphic device is designed with doped regions, semiconductor regions, and MOS transistors to reduce power consumption and increase integration, featuring a configuration that allows for excitatory and inhibitory functionalities, spike timing dependent plasticity, and long-term plasticity, while eliminating the need for selection elements, thus improving durability and area efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If SRAM is used for synapse imitation, then digital memory functionality is achieved, but occupied area increases and integration is limited
Solution Approach 1:
The patent merges multiple functions into a single compact device structure. The three-doped region configuration simultaneously provides memory functionality, excitatory/inhibitory control, and synapse imitation in one integrated unit, dramatically reducing the occupied area compared to traditional SRAM-based approaches that require separate components for each function.
2Adaptability or versatility
If RRAM or PRAM is used for analog memory implementation, then synapse function imitation is improved, but durability and power consumption problems occur
Solution Approach 1:
The patent changes the fundamental operating parameters by using doped semiconductor regions with different conductivity types instead of resistive or phase-change materials. This parameter change enables analog memory functionality and synapse imitation while achieving superior durability through the inherent stability of doped semiconductor structures and reducing power consumption through controlled conductivity transitions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The neuromorphic device effectively imitates neuron and synapse functions with reduced power consumption, enhanced durability, and high integration, enabling efficient neural imitation and learning capabilities in a compact form.
Implementation Method 1
a channel which is formed with a semiconductor material on the gate insulating film, wherein a conductivity type of the channel is changed in response to a voltage applied to the gate
Implementation Method 2
first, second, and third doped regions which are formed with a semiconductor material doped with impurities... to be electrically isolated from each other
Data Source
AI summary
Provided is a neuromorphic device including first and second lower electrodes formed on a substrate to be electrically separated, first and second lower insulating film stacks formed at least on respective surfaces of the first and second lower electrodes, first, second, and third doped regions formed at left and right sides of the first and second lower electrodes, first and second semiconductor regions formed on the first and second lower insulating film stacks, an upper insulating film stack formed on the first and second semiconductor regions and the first, second, and third doped regions, and an upper electrode formed on the upper insulating film stack. Accordingly, a specified neuromorphic device can be reconfigured to have arbitrarily inhibitory or excitatory functionality by using the first and second lower electrodes and the lower insulating film stacks including charge storage layers formed on the surfaces of the electrodes.