Nanoimprinted Conductive Structure for Uniform Current Distribution in LEDs
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Solution Overview
Problem
Existing semiconductor devices face challenges in uniformly spreading electric current across a light-emitting layer without increasing the surface area of the contact electrode, leading to reduced light extraction and brightness in LEDs.
Innovation Solution
A conductive structure with a nano-imprint technique is formed between the electrode and the semiconductor stacked layer, featuring a conductive dot or line structure with a specific width and height ratio, and optionally including a roughened or periodic surface structure, to facilitate uniform current distribution and reduce light blocking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the surface area of the contact electrode is enlarged to spread electric current uniformly, then current distribution is improved, but light blocking effect increases and light extraction is reduced
Solution Approach 1:
The patent transitions from a two-dimensional planar contact electrode to a three-dimensional conductive structure with vertical height. The conductive structure extends downward into the semiconductor layer, creating a volumetric current distribution path that achieves uniform current spread without increasing the top surface area, thus avoiding light blocking while maintaining electrical performance
Solution Approach 2:
The conductive structure is nested within the semiconductor device, with the conductive material embedded into the semiconductor layer. The structure integrates multiple functional regions (contact region, transition region, light-emitting region) within a single vertical columnar form, achieving current spreading functionality without occupying additional lateral space
2Manufacturing precision
If a semi-transparent current spreading layer is used to spread electric current, then current distribution is improved, but light absorption increases when the layer is made thinner to reduce light absorption
Solution Approach 1:
The patent extracts the current spreading function from a separate semi-transparent layer and integrates it directly into the contact electrode structure. The conductive structure itself performs both electrical conduction and current spreading functions, eliminating the need for an additional current spreading layer that would cause light absorption losses
Solution Approach 2:
The conductive structure serves multiple functions simultaneously: it acts as the contact electrode for electrical connection, provides current spreading through its vertical geometry, and maintains optical transparency by not requiring a separate semi-transparent layer. This multi-functional design resolves the trade-off between current spreading and light absorption
Data Source
AI summary
An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.