CMP Cleaning Slurry for Thin Layer By-Product Removal
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Solution Overview
Problem
Existing methods for chemical mechanical polishing of thin layers on substrates often leave behind by-products that are difficult to remove effectively, particularly when using conventional wet cleaning processes which can damage the substrate or fail to thoroughly remove adhered particles.
Innovation Solution
A method involving a thin layer processing apparatus with a polishing module and a cleaning module, where chemical mechanical polishing is followed by an in-situ cleaning process using a slurry with metal oxide powder and hydrogen peroxide, allowing for effective removal of by-products without damaging the substrate, by controlling the flow rate and pressure of the cleaning slurry to prevent additional material removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional wet cleaning processes are used to remove by-products after chemical mechanical polishing, then the substrate can be cleaned, but the processing target layer may be damaged or particles may not be thoroughly removed
Solution Approach 1:
The invention changes the chemical composition parameters of the cleaning slurry by adding hydrogen peroxide (H2O2) to the conventional slurry mixture. This chemical parameter change enables effective removal of organic by-products through oxidation while maintaining gentle action that prevents damage to the processing target layer, thus resolving the contradiction between cleaning effectiveness and substrate damage prevention
Solution Approach 2:
The invention creates a composite cleaning slurry by combining multiple components: metal oxide powder (abrasive), hydrogen peroxide (oxidizing agent), and water (solvent). This composite formulation provides multi-functional cleaning action that effectively removes both inorganic particles and organic by-products without damaging the thin layer, achieving both high cleaning effectiveness and substrate protection
2Manufacturing precision
If chemical mechanical polishing is performed on thin layers such as copper, aluminum, or their alloys, then the thin layer can be etched and planarized, but by-products remain adhered to the substrate that are difficult to remove
Solution Approach 1:
The invention modifies the chemical parameters of the cleaning slurry by incorporating hydrogen peroxide at specific concentrations (0.1-10 wt%). This chemical parameter change enables the slurry to effectively oxidize and remove organic by-products adhered to the substrate after CMP, achieving high by-product removal efficiency without affecting the planarization quality of the thin layer
Solution Approach 2:
The hydrogen peroxide acts as an intermediary substance that facilitates the removal of by-products by oxidizing them into removable forms. This intermediary chemical action enables effective by-product removal while the metal oxide powder serves as a mechanical intermediary for gentle abrasion, together resolving the contradiction between maintaining planarization quality and achieving thorough by-product removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes by-products from the substrate while preventing damage to the processing target layer, allowing for better control of the cleaning process and ensuring the integrity of the thin layer.
Implementation Method 1
chemical mechanical polishing has been applied to achieve etching and planarization for a thin layer stacked on a substrate
Implementation Method 2
The polishing slurry includes a metal oxide powder as an abrasive, and hydrogen peroxide (H2O2) as an oxidizing agent
Data Source
AI summary
In a method of processing a thin layer according to an embodiment, a substrate having a processing target layer is provided into a polishing module of a thin layer processing apparatus. A chemical mechanical polishing process using a polishing slurry is performed on the processing target layer. The substrate is cleaned using a cleaning slurry.