CMP Polishing Composition for Selective Molybdenum Removal
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Solution Overview
Problem
Molybdenum, due to its hardness and chemical resistance, is difficult to polish with high removal rates and low defectivity in the semiconductor industry, posing a challenge for Chemical Mechanical Polishing (CMP) processes.
Innovation Solution
The use of polishing compositions containing at least one abrasive, an organic acid or its salt, a first amine compound with an alkylamine having a 6-24 carbon alkyl chain, a second amine compound with at least two nitrogen atoms, and an aqueous solvent, which selectively remove molybdenum and its alloys relative to other materials in a controlled manner.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP processes are used on molybdenum, then the material's hardness and chemical resistance are maintained, but the removal rate is low and defectivity increases
Solution Approach 1:
The patent modifies the chemical composition parameters of the CMP slurry by incorporating specific organic acids (e.g., formic acid, acetic acid, propionic acid) and amine compounds (e.g., hexylamine, octylamine, dodecylamine) to alter the chemical reactivity toward molybdenum. This enables controlled chemical etching that overcomes molybdenum's inherent chemical resistance, achieving higher removal rates without compromising surface quality or increasing defectivity.
2Productivity
If aggressive polishing methods are used to increase removal rate, then productivity improves, but corrosion resistance and static etch rate worsen
Solution Approach 1:
The patent introduces organic acid-amine complexes as intermediary chemical agents that mediate the interaction between the polishing slurry and molybdenum. These intermediaries provide controlled chemical etching capability, enabling material removal through chemical reactions rather than purely mechanical abrasion. This approach achieves high removal rates while maintaining excellent corrosion resistance and low static etch rates, as the chemical reaction is selective and controllable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables controlled selective removal of molybdenum with excellent corrosion resistance and a low static etch rate, improving the efficiency and quality of the CMP process.
Implementation Method 1
CMP is a process used to planarize/flatten a wafer surface by removing material using abrasion-based physical processes
Implementation Method 2
CMP is a process used to planarize/flatten a wafer surface by removing material using abrasion-based physical processes concurrently with surface-based chemical reactions
Data Source
AI summary
This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.