Other Chemical Processes TRIZ Cases

CF3I blended with selected hydrocarbons cuts refrigerant GWP while preserving non-flammability and thermodynamic performance.

An aqueous polyorganosiloxane and silicone resin blend repels water and oily soils without fluoropolymers, balancing stability, cost, and safety.

Blending HFO-1234yf or HFO-1234ze with HFC-32 and HFC-152a lowers GWP while preserving cooling capacity and reducing flammability.

Blending HFO-1234yf with HFC-32 and HFC-152a lowers GWP while preserving cooling capacity and reducing flammability in existing systems.

A stretch-bonded laminate wiper uses oleophilic elastic and nonwoven layers to absorb oils deeply, retain contaminants, and resist breakdown.

A mixed HFO-1234yf, HFC-32, and trans-HFO-1234ze refrigerant cuts GWP while maintaining Class A toxicity, low flammability, and cooling performance.

A leuco dye, Lewis acid, and binder system enables rapid wetness indication, room-temperature printing, and leach-resistant adhesion.

A fluorinated and long-chain alkyl copolymer maintains water/oil repellency under washing and heavy rain through tuned monomer ratios.

Capsules fixed on reinforcing surfaces release healing agent at interfacial cracks, restoring bonding and slowing crack growth in composites.

Transparent coated inorganic particles preserve floor appearance while maintaining slip resistance, even as the surface coating wears.

A fluorinated copolymer with long-chain alkyl and vinylidene chloride units preserves water/oil repellency after washing and heavy rain.

A low-pH colloidal silica slurry boosts titanium barrier-layer removal while avoiding fluoride, metallic catalysts, erosion, and contamination.

A crosslinkable fluorinated copolymer balances oil repellency and soil release on textiles while retaining washing durability with shorter fluoroalkyl groups.

Controlled 60-120 µm particles in a curable floor coating balance slip resistance, cleanability, application ease, and surface appearance.

Graphene oxide bonded into thermo-responsive hydrogels boosts swelling and enables infrared-triggered volume change for microfluidic valves and microlenses.

A high-molecular-weight copolymer with short-chain fluoro groups improves dynamic and air-dried water/oil repellency while lowering environmental impact.

A fluorinated copolymer with long-chain alkyl and vinylidene chloride units helps surfaces keep water/oil repellency after washing and heavy rain.

A silane-modified olefinic edge sealant improves glass adhesion, resists deformation, and limits gas leakage in insulating glass and solar modules.

A polysaccharide, sodium L-pyrrolidonecarboxylate, and etherified starch paste keeps viscosity stable in cold transfer printing and improves color fastness.

Excess surfactant is separated after emulsification by forming concentrated regions, cutting final surfactant content while keeping droplets stable.

An aqueous copolymer coating uses C1-6 polyfluoroalkyl units and film-forming assistants to keep air-dried water/oil repellency with lower impact.

Blocked isocyanate bonding and organopolysiloxane help fluoropolymer textile treatments retain strong water and oil repellency after wear and cleaning.

Pre-folded adhesive and silicone-treated zones protect the adhesive during storage while allowing surface attachment without a separate release sheet.

Chemical bonding between a fluoropolymer and blocked isocyanate improves water and oil repellency durability while keeping textiles soft.

Activated carbon impregnated with silica-gel and CaCl2 boosts low-pressure water vapor uptake and adsorption rate for cooling and dehumidification.

Short-chain fluorinated copolymer tuning keeps hydrophobic substrates water- and alcohol-repellent without sacrificing antistatic performance.

A two-stage fluoropolymer composition maintains strong water and oil repellency while preventing tacky buildup on treatment rolls.

A tri-chelator copper CMP slurry balances fast copper removal with low dishing, barrier selectivity, and fewer defects at advanced nodes.

Water-soluble nitrogen compounds in a polishing slurry weaken resin surfaces, enabling faster CMP with high flatness and lower damage.

A low-density filler adsorbs perfluoropolyether in fluorine rubber seals, limiting bleed-out and mass loss under plasma exposure.

Polyoxyalkylene sulfonate or sulfate inhibitors help CMP slurries remove TiN over SiN, protecting barrier layers and gate height.

A nitrogen-containing polishing additive chemically weakens resin, enabling faster planarization with low damage and excellent flatness.

A curable composition absorbs leaking oil before curing, then hardens under active energy rays to seal pipe leaks with higher reliability.

Chelating CMP slurry boosts copper and ruthenium removal while limiting pad debris, wafer defects, and low-k material damage.

Core-shell silica with an aluminate shell and ion exchange maintains negative charge, limits aluminum loss, and improves CMP selectivity.

Mixed-cation polymer additives in tungsten CMP slurries suppress dishing and erosion while preserving selective metal removal and wafer planarity.

Modified liquid diene rubber improves bead filler pumpability and dripping resistance while preserving cured elasticity, rigidity, and adhesion.

A nonfluid activating layer speeds hydrogen desorption from MOF storage, enabling fast vehicle fuel release at lower pressure.

Cerium oxide abrasives plus a hydroxy-group ether raise CMP removal rates for resin-containing members while also smoothing metal surfaces.

Carbon powder with Mohs hardness 2.5-7.0 roughens fuel cell separators while minimizing residue, lowering contact resistance, and improving gasket adhesion.

A two-step polishing sequence uses harder, higher-ORP abrasives first and softer finishing abrasives later to achieve flatness and smoothness faster.

A modified PVA polymer shields silicon wafers from alkaline etching, cutting LPD-N defects while preserving polishing removal rate.

A dual-amine organic acid CMP slurry raises molybdenum removal rates while maintaining low defectivity, corrosion resistance, and etch control.

A basic nitrogen compound moderates formic acid to prevent metal corrosion and aggregation while enabling low-temperature sintering in inert atmospheres.

Organic polishing boosters replace inorganic particles in CMP slurry to polish polysilicon quickly, improve selectivity, and reduce damage.

Amino-silane abrasives, azole inhibitor, and betaine-salicyl protectant balance copper CMP rates while limiting dishing and corrosion.

Azeotropic Z-1233zd blends balance low global warming potential with chemical stability for refrigerants, propellants, and foam expansion.

Stable hydronium ion complexes enable aqueous and alkaline pH adjustment without harsh reactivity or shifting the free acid to total acid ratio.

A fluorinated surfactant and pad protectant in CMP slurry cut organic-particle defects while preserving substrate flatness and yield.

Dual azole corrosion inhibitors let low-pH CMP slurry protect tungsten while maintaining silicon oxide polishing rate and reducing defects.

Positively charged abrasives and controlled alkali metal ions raise CMP rates on oxide and tungsten while limiting dishing, erosion, and defects.

Conductive polymer composites improve solar absorption and evaporation pathways to purify water and separate oil with simpler structures.

A raised sealant plateau supports noise dampening strips while thinner adjacent regions cut heat build-up, material use, and puncture-sealing tradeoffs.

Non-stoichiometric SiOx in a fluoropolymer sealing composition adsorbs oxygen while preserving heat and plasma resistance in sealed spaces.

High-purity colloidal silica with tuned additives enables selective polishing of oxide, nitride, and polysilicon while minimizing scratches.

A vinyl alcohol-based water-soluble polymer helps wafer polishing cut LLS defects, haze, and AFM roughness for higher-quality semiconductor surfaces.

An alkaline CMP slurry with phenyl quaternary ammonium compounds cuts silicon oxide scratches while maintaining strong removal rates.

Iron-ion CMP slurry with carboxyl stabilizers boosts tungsten polishing while limiting dishing and erosion on fine-pitch patterns.

Controlling silica water affinity and particle shape raises CMP polishing speed while reducing scratches, defects, and foreign matter adhesion.

A colloidal silica slurry with surfactant, thickener, chelating agent, and organic base cuts wafer haze and defects while maintaining polishing speed.

Hard nano-abrasives and soft particles with matching zeta-potential polarity raise CMP rate while limiting scratches on sub-10 nm features.

A multivalent metal oxide slurry raises insulating-material polishing rates, helping 3D-NAND CMP resolve height differences faster.

A polymer coating with naphthyl sulfonic acid dissipates static charge while preserving aircraft surface visibility and durability.

A guanamine-based CMP slurry lowers static etch on tungsten and molybdenum while maintaining removal rates to reduce polishing defects.

Mechanical or electromagnetic activation of modified CMP slurry raises removal rate, cuts defects, and reduces slurry use in wafer polishing.

Controlled silanol density and low-pH slurry chemistry raise oxide removal and selectivity to silicon stop layers, simplifying CMP.

A polyurethane CMP pad with a controlled softening index keeps hardness and elongation stable, sustaining removal rate while limiting defects.

A cerium CMP slurry with 4-pyrone and pH-controlling additives raises oxide polishing rate on patterned wafers while limiting scratches.

Heterocyclic corrosion inhibitors in CMP slurry raise molybdenum and tungsten removal while limiting etching and reducing multi-step polishing.

A surfactant and skew inhibitor in CMP slurry reduce dishing on oxide and skew on nitride while maintaining polishing rate.

Ceria abrasives with a cationic polymer and quaternary salt raise SiN and polysilicon removal while protecting silicon oxide.

A cationic silica, polyalkylene glycol, and acid slurry raises polishing speed on high group 13 layers while preserving selectivity.

A controlled polyoxyalkylene polymer in the polishing composition lowers polysilicon removal rate while reducing organic residues after polishing.

A CMP slurry using positive-zeta abrasives, organic acid, surfactant, and H2O2 boosts TiN removal while suppressing SiO2 polishing.

Balances Ta, TEOS, and Cu CMP removal using silica, phosphate surfactant, and inhibitor to limit Cu loss and reduce dishing.