CMP Slurry Activation for Higher Removal Rate and Fewer Defects

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Solution Overview

Problem

The Chemical Mechanical Planarization (CMP) process in semiconductor manufacturing faces challenges with lower material removal rates, increased slurry consumption, and surface defects due to inadequate slurry formulations and application methods.

Innovation Solution

A modified CMP slurry is developed by incorporating a capsulizing agent that forms supramolecular structures and a material additive, along with the application of mechanical or electromagnetic wave energy, to enhance the polishing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional CMP slurry is used, then the polishing process can be performed, but material removal rate is low

Engineering Contradiction:

Improvematerial removal rateVSAvoidslurry consumption

Core Design Contradiction:

ProductivityVSQuantity of substance

Solution Approach 1:

The patent modifies the chemical composition parameters of the CMP slurry by incorporating specific additives including chelating agents, dispersants, and pH buffers. These parameter changes optimize the slurry's chemical reactivity and abrasive particle distribution, thereby increasing the material removal rate while maintaining controlled slurry consumption through improved polishing efficiency

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite slurry formulation by combining abrasive particles with multiple chemical additives including chelating agents, dispersants, and pH buffers. This composite structure enhances the slurry's overall performance by integrating mechanical abrasion with chemical reactions, achieving higher material removal rates with optimized slurry usage

Inventive Principle:

Principle #40Composite materials

2Manufacturing precision

If conventional CMP slurry formulation is used, then the process is simple, but surface defects occur

Engineering Contradiction:

Improvesurface qualityVSAvoidslurry formulation complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces intermediary substances including chelating agents that mediate between the abrasive particles and the substrate surface, and dispersants that act as intermediaries to prevent particle aggregation. These intermediaries improve surface quality by controlling the interaction mechanisms while adding necessary complexity to the slurry formulation

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent adjusts multiple formulation parameters including pH level, ionic strength, and additive concentrations to optimize surface quality. These parameter changes create a more complex formulation system that precisely controls the polishing chemistry to minimize surface defects

Inventive Principle:

Principle #35Parameter changes

3Productivity

If conventional slurry application method is used, then the process is straightforward, but slurry consumption increases

Engineering Contradiction:

Improvepolishing efficiencyVSAvoidslurry consumption

Core Design Contradiction:

ProductivityVSLoss of substance

Solution Approach 1:

The patent replaces purely mechanical abrasion with a combined chemical-mechanical system where chemical reactions soften or dissolve material before mechanical removal. This substitution increases polishing efficiency by enabling faster material removal while reducing slurry consumption through enhanced material removal rates

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves material removal rates, reduces defects, and minimizes slurry consumption, leading to increased productivity and better surface quality in semiconductor wafer polishing.

Implementation Method 1

a capsulizing agent that forms a supramolecular structure selected from a group consisting of a vesicle, a micelle, a polyelectrolyte and a liposome

Methodology Applied

Scientific EffectSelf-assembly: Self-Assembly

Implementation Method 2

directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry

Methodology Applied

Scientific EffectUltrasonic cavitation: Acoustic Cavitation

Implementation Method 3

directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry

Methodology Applied

Scientific EffectPhotochemical reaction: Photo-oxidation

Data Source

PatentUS20250101261A1Chemical mechanical planarization slurry processing techniques and systems and methods for polishing substrate using the same

Publication Date: 2025.03.27 ARACA INC

AI summary

A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.