CMP Slurry Composition for High-Selectivity Group 13 Polishing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge is to develop a polishing composition that can efficiently polish a substrate with a layer containing an element from group 13 of the periodic table, with a content of 40 mass % or more, at a high polishing speed.
Innovation Solution
A polishing composition comprising cationically modified silica, polyalkylene glycol, and an acid is used to polish the substrate. This composition enhances the polishing speed for the group 13 element layer while maintaining a higher selection ratio compared to other materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing compositions are used on substrates with high group 13 element content (40 mass % or more), then the polishing speed is insufficient, but changing the composition to achieve higher speed may reduce selectivity against other materials
Solution Approach 1:
The invention changes the chemical parameters of the polishing composition by incorporating specific acids (nitric acid, sulfuric acid, phosphoric acid, or boric acid) in controlled concentrations (0.01-10 mass%), which fundamentally alters the interaction mechanism between the polishing slurry and the group 13 element layer, enabling high polishing speed while preserving selectivity
Solution Approach 2:
The invention creates a composite polishing composition system that combines traditional abrasive particles with specific acid components and auxiliary agents, forming a multi-component system where each component contributes to both the high polishing speed and the selective removal of group 13 elements over other materials
2Manufacturing precision
If the polishing composition is optimized for high polishing speed on group 13 element layers, then the selection ratio against other materials improves, but this optimization has never been examined for substrates with 40 mass % or more group 13 element content
Solution Approach 1:
The invention systematically adjusts critical parameters including acid type (nitric, sulfuric, phosphoric, or boric), acid concentration (0.01-10 mass%), and the combination with abrasive particles to achieve optimal selectivity for group 13 elements, which simultaneously enables high polishing speeds on substrates with 40 mass % or more group 13 element content
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polishing composition achieves a high polishing speed for the group 13 element layer, with a significant increase in the selection ratio compared to other materials, indicating improved efficiency and selectivity.
Implementation Method 1
CMP is a method for flattening a surface of an object to be polished (polishing object) such as a semiconductor substrate using a polishing composition (slurry) containing abrasive grains such as silica, alumina, or ceria
Implementation Method 2
the polishing composition containing a cationically modified silica, a polyalkylene glycol, and an acid
Data Source
AI summary
Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a polyalkylene glycol, and an acid.