CMP Slurry Composition for Copper Dishing and Corrosion Control

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The existing CMP processes for semiconductor manufacturing face challenges in controlling the polishing rate for different types of films, particularly in polishing copper wiring where the rates for copper, barrier films, and insulating films vary, leading to issues like dishing and corrosion.

Innovation Solution

A composition for semiconductor processing is developed, comprising abrasive particles surface-modified with an amino silane-based compound, a copper erosion inhibitor (azole-based compound), a copper surface protectant (betaine and salicylic groups), and a surfactant with fluorine. This composition is designed to optimize the polishing process by controlling the polishing rates and preventing corrosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional slurry composition is used for copper wiring polishing, then polishing process can be performed, but polishing rate control for different films is difficult and dishing and corrosion occur

Engineering Contradiction:

Improvepolishing rate controlVSAvoiddishing and corrosion

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent modifies the chemical composition parameters of the slurry by incorporating specific compounds (amine-based corrosion inhibitor, azole-based corrosion inhibitor, betaine-salicylic acid complex, and fluorinated surfactant) to change the interaction between slurry and different films, achieving differential polishing rate control that prevents dishing and corrosion while maintaining manufacturing precision

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite slurry formulation combining multiple functional components (abrasive particles, corrosion inhibitors, surface protectants, and surfactants) that work synergistically to achieve both high polishing rate control and protection against harmful effects like dishing and corrosion on copper wiring and surrounding films

Inventive Principle:

Principle #40Composite materials

2Productivity

If high polishing rate is achieved, then productivity increases, but dishing and corrosion worsen

Engineering Contradiction:

Improvepolishing rateVSAvoiddishing and corrosion

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent adjusts chemical composition parameters to enable high polishing rates while simultaneously controlling harmful effects through the synergistic action of multiple corrosion inhibitors and surface protectants that maintain film integrity even at elevated polishing speeds

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces intermediary compounds (betaine-salicylic acid complex and fluorinated surfactant) that mediate between the abrasive action and the film surfaces, allowing high polishing rates to be achieved while these intermediaries prevent direct harmful interactions that cause dishing and corrosion

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves a maximum roughness of 220 nm or less on copper vias and maintains a copper corrosion inhibition index of 8 to 15, ensuring efficient polishing with minimal dishing and corrosion, even at high polishing rates.

Implementation Method 1

The slurry composition performs a more optimized and extensive planarization process by selectively etching an exposed portion of the wafer surface through physical and chemical actions

Methodology Applied

Scientific EffectPhysical etching: Abrasion

Implementation Method 2

The slurry composition performs a more optimized and extensive planarization process by selectively etching an exposed portion of the wafer surface through physical and chemical actions

Methodology Applied

Scientific EffectChemical etching: Chemical Bonding

Implementation Method 3

abrasive particles surface-modified with an amino silane-based compound; A surface of the surface-modified abrasive particles comprises an amino silane group

Methodology Applied

Scientific EffectSurface modification: Adsorption

Implementation Method 4

a copper erosion inhibitor, including an azole-based compound

Methodology Applied

Scientific EffectCopper erosion inhibition: Adsorption

Implementation Method 5

a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof

Methodology Applied

Scientific EffectCopper surface protection: Adsorption

Implementation Method 6

a surfactant, including fluorine in a molecule thereof

Methodology Applied

Scientific EffectSurfactant action: Surface Tension

Data Source

PatentEP4261258B1Composition for semiconductor processing and polishing method of semiconductor device using the same

Publication Date: 2025.05.14 SK ENPULSE CO LTD

Figure 1~2
Figure 3~4

AI summary

A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azolebased compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.