CMP Pressure Control Using Constrained Cost Function

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Solution Overview

Problem

Chemical mechanical polishing (CMP) processes face challenges in achieving uniform material removal rates due to variations in substrate thickness, slurry composition, polishing pad conditions, and pressure loads, leading to within-wafer non-uniformity and edge exclusion issues.

Innovation Solution

A computer program or method that uses in-situ monitoring to calculate adjustments for polishing parameters by minimizing a cost function, considering differences between current and target characterizing values, and projected pressure changes, while adhering to constraints, to optimize pressure control across multiple zones on a substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional CMP control methods are used, then the polishing process is simple to operate, but within-wafer non-uniformity and edge exclusion occur due to variations in material removal rate

Engineering Contradiction:
Improvepolishing uniformityVSAvoidcontrol system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The substrate surface is divided into multiple zones (e.g., center, mid-radius, edge zones) with independently controllable pressure chambers. This segmentation allows differential pressure control across different regions to compensate for variations in material removal rate and achieve uniform polishing across the wafer surface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The system dynamically adjusts pressure distribution in real-time during the polishing process based on feedback from in-situ monitoring. The controller continuously modifies pressure chamber outputs to maintain target polishing rates across different zones, transforming static pressure control into a dynamic adaptive system.

Inventive Principle:
Principle #15Dynamics

2Productivity

If pressure is increased to accelerate material removal, then productivity improves, but pressure changes cause instability and within-wafer non-uniformity

Engineering Contradiction:
Improvematerial removal rateVSAvoidpolishing process stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

Different pressure levels are applied to different zones based on their specific polishing requirements. Zones with lower material removal rates receive higher pressure, while zones with higher removal rates receive lower pressure, creating a localized quality approach that maintains stability while achieving overall productivity goals.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

In-situ monitoring systems continuously measure polishing progress and provide feedback to the controller. The controller uses this feedback to adjust pressure in real-time, preventing instability caused by excessive pressure changes and ensuring reliable, consistent polishing results.

Inventive Principle:
Principle #23Feedback

3Manufacturing precision

If in-situ monitoring and real-time control are implemented, then polishing precision and uniformity improve, but system complexity and computational requirements increase

Engineering Contradiction:
Improvethickness control accuracyVSAvoidmonitoring and control system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The system pre-calculates pressure adjustments based on predicted polishing outcomes and applies them proactively. By anticipating future polishing states and preparing control actions in advance, the system achieves high precision without requiring excessively complex real-time computation during the polishing process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system monitors and adjusts key polishing parameters (pressure, speed, slurry flow) in real-time based on measured thickness variations. By dynamically changing these parameters according to actual process conditions, the system achieves precise thickness control while managing complexity through focused parameter optimization.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11919121B2Control of processing parameters during substrate polishing using constrained cost function
Publication Date: 2024.03.05 APPLIED MATERIALS INC
  • US11919121B2 patent drawing
  • US11919121B2 patent drawing
  • US11919121B2 patent drawing

AI summary

Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. Calculation of the adjustment includes minimizing a cost function that includes, for each region, a difference between a current characterizing value or an expected characterizing value at an expected endpoint time and a target characterizing value for the region, and optimization of the cost function is subject to at least one constraint.