Lapping Machines TRIZ Cases

Forward-conduction pressure cavities speed wafer loading judgment, improve detection accuracy, and reduce fragment risk during polishing.

A sweep-moving spray head and buffing pad improve post-CMP edge cleaning, removing particles and residues that can lower semiconductor yield.

Radial airflow through the polishing pad spreads slurry evenly with less supply and keeps the center path clear for wafer thickness measurement.

Pre-screening carriers by inclination near the wafer hole suppresses edge roll-off and improves wafer flatness in double-sided polishing.

Individually controlled concentric CMP zones adjust pressure, speed, height, temperature, and slurry flow to improve wafer thickness uniformity.

Variable wafer and pad rotation speeds create asymmetric CMP removal, correcting thickness nonuniformity for more consistent IC performance.

A solid-phase foaming approach stabilizes polishing pad micropores to raise CMP rate and reduce wafer residues, scratches, and chatter marks.

Time-series reflected-light spectra are combined into 3D data to reduce noise-driven variation and improve wafer film thickness accuracy.

A spring-loaded sponge on the rotating platen removes dried polishing liquid from the platen shield, cutting scratches and cleaning downtime.

A multi-axis sample holder enables in-situ inspection and precise beveling while a squeegee and slurry arm clear debris during polishing.

Engraved retainer ring regions dislodge pad debris during CMP, enabling vacuum removal in real time to cut wafer scratches and offline cleaning.

Rotatable exchanger blades and a vertically movable load cup cut robot wait time by enabling parallel wafer loading and unloading.

Wear and polishing-state data feed a machine learning model to predict CMP endpoint reliability and avoid under- or over-polishing.

In-situ regional monitoring and constrained pressure optimization improve CMP uniformity, target thickness control, and edge exclusion.

Selects the best wafer processing tool by comparing post-process characteristics to standard center values, improving yield consistency.

In-situ regional feedback minimizes a CMP cost function to tune chamber pressures, improving wafer uniformity while avoiding oscillatory pressure changes.

A hole-fed conductive polishing pad enables electrochemical oxidation of silicon carbide, raising removal rate while reducing defects and contamination.

An oil-in-water conductive electrolyte with solid granulates speeds electrochemical polishing while improving surface finish and limiting local corrosion.

Housing-transmitted vibration sensing measures substrate rotation speed without idlers, reducing slip, contamination, and sensor maintenance issues.

A staged linear actuator and expandable flexure improve downforce uniformity across substrates, delivering more repeatable cleaning and higher die yield.

PWM-controlled electromagnet tuning adjusts grinding pressure in real time for more uniform material removal on plane and freeform surfaces.

Automated pad carriers and magnetic or adsorption attachment cut CMP polishing pad replacement time while improving attachment consistency.

3D surface roughness tuning creates an air layer that limits powder adhesion and improves stable flow across varied particle sizes.

A friction-driven rolling setup uses rails, bearings, and linear motion to machine and measure long-path gear involute artifacts with Class-1 accuracy.

In-situ CMP feedback predicts future pressure updates to improve wafer thickness uniformity and smooth pressure transitions.

Zone pressure control tracks substrate orientation during CMP to correct angular asymmetry and match the target thickness profile.

In-situ feedback adjusts CMP zone pressures under constraints to improve within-wafer uniformity, edge control, and target thickness.

A PID-controlled coolant loop keeps CMP platen temperature in range, stabilizing removal rates and preventing polishing fluid breakdown.

A two-stage wafer cleaning sequence combines water rinsing and polishing-pad cleaning to remove post-dicing particles and improve hybrid bonding quality.

Scan-based modeling predicts post-grind wafer nanotopography early, enabling grinder adjustment before C-Marks and B-Rings cause yield loss.