CMP Platform with Dedicated Rework Station for Throughput
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Solution Overview
Problem
Conventional chemical-mechanical polishing (CMP) processes for semiconductor wafers face throughput issues due to the need for re-work, especially with larger workpieces, as they require re-polishing at the same stations, leading to increased time and decreased efficiency.
Innovation Solution
A system comprising multiple polishing stations with distinct CMP heads and a rework station, where a measurement apparatus determines unsatisfactory parameters, and a transport apparatus selectively directs the workpiece to the rework station without interrupting the normal polishing process, allowing concurrent processing of additional workpieces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the same polishing station is used for both initial polish and re-work polish, then re-work can be performed to correct parameters, but throughput decreases due to redundant utilization and longer processing time
Solution Approach 1:
The polishing system is segmented into multiple independent polishing stations (first polishing station, second polishing station, third polishing station) that can operate simultaneously. This allows workpieces requiring re-work to be processed at different stations without blocking the initial polishing workflow, thereby maintaining throughput while achieving required precision.
Solution Approach 2:
The system adds a temporal dimension to the polishing process by implementing parallel processing across multiple stations. Instead of sequential re-work at the same station, multiple workpieces are processed concurrently at different stations, effectively transforming the single-dimensional sequential process into a multi-dimensional parallel process that increases throughput.
2Manufacturing precision
If larger workpieces are processed at the same polishing station for re-work, then corrections can be made, but processing time increases significantly
Solution Approach 1:
The system divides the re-work process into separate polishing stations specialized for different workpiece sizes. The first polishing station handles smaller workpieces while the second polishing station is dedicated to larger workpieces requiring re-work. This segmentation allows simultaneous processing of different workpiece sizes without time conflicts, reducing overall re-work processing time.
3Productivity
If multiple polishing stations are implemented to enable parallel processing, then throughput increases, but system complexity increases
Solution Approach 1:
Multiple polishing stations are designed with universal functionality to handle different workpiece sizes and re-work requirements. Each station is equipped with adjustable parameters and configurations that allow them to perform both initial polishing and re-work polishing, reducing the need for highly specialized equipment and simplifying the overall system architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances throughput by minimizing the impact of re-work on overall processing time, particularly for larger workpieces, by utilizing dedicated rework stations to address unsatisfactory parameters without halting the production of other wafers.
Implementation Method 1
The first CMP head, for example, is configured to perform a rough chemical-mechanical polish on a workpiece
Implementation Method 2
The second CMP head is configured to perform a fine chemical-mechanical polish on the workpiece
Implementation Method 3
the rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece
Implementation Method 4
A measurement apparatus is further provided and configured to measure one or more parameters of the workpiece
Implementation Method 5
A transport apparatus is configured to transport the workpiece between two or more of the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and the measurement apparatus
Implementation Method 6
a cleaning apparatus is configured to clean polishing residue from the workpiece
Data Source
AI summary
A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.