Lapping Machines TRIZ Cases

Deflectable annular flange applies localized pressure to correct substrate edge non-uniformity without adding separate polishing stations.

Adding a chelating agent to recycled slurry stabilizes composition and reduces metal impurity contamination without introducing unused abrasive grains.

Organic polymer polishing agent switches between gel and sol states to adjust viscosity dynamically.

Segmenting imaging into table and workpiece steps excludes scratches from detection, maintaining measurement precision.

A crane moves a polishing table vertically and horizontally while a tilting stage adjusts its orientation for precise placement.

A thermal imaging surface processing auxiliary system adjusts grinding tool speed based on real-time temperature changes detected by a sensor.

An autoencoder analyzes reflected light spectra to identify wrong workpieces during polishing.

Air flows through support pole through-holes to prevent thermal expansion and inclination changes during wafer grinding.

Dedicated transport routes eliminate congestion and contamination risks during substrate processing.

Protruding portions on a chemical mechanical polishing heat exchanger redirect slurry flow to the pad interface.

Segmented conditioning heads rotate and press against polishing pads, reducing conditioning time while extending element life.

Toroidal lapping tool restores flatness on wafer pin chucks, correcting mid-spatial frequency errors from non-uniform pin distribution.

Radial or circumferential grooves provide persistent traceability without disrupting vacuum application.

A grinding apparatus measures sub-chuck table height to calculate workpiece thickness using a movable measuring unit mechanism.

Chemical liquid dissolves abrasive grains in the light passage, preventing measurement errors without continuous water supply.

Dynamic carrier offset via an elastic membrane eliminates circumferential film thickness variations in chemical mechanical polishing.

A thermoplastic polyurethane polishing pad with controlled storage elastic modulus balances planarization efficiency and surface protection.

Embedded sensors and statistical process control adjust taping pressure to prevent wafer warpage and breakage.

A movable retainer ring opens and closes trenches to intermittently supply polishing solution onto the polisher.

Inclined cutoff parts on dual-surface polishing plates modify the mechanical contact interface to control material removal rates across the wafer.

Offset concentric grooves on a polishing pad improve slurry retention and reduce defects while maintaining substrate planarity.

A gravity-contact heat conductor maintains pad temperature while preventing obstruction of polishing fluid flow for improved in-plane uniformity.

Adjusting rotational speeds during startup polishing minimizes front-back insert height differences, ensuring wafer edge flatness.

A polishing head uses sequential chamber pressurization to expel fluid from the workpiece surface.

A chemical-mechanical polishing platform uses a dedicated rework station to correct surface finish parameters without halting the main production line.

A double-sided grinding machine uses a workpiece force sensor to detect machining loads and dynamically adjust feed rates for balanced cutting.

An inner tank cleans the brush cleaner via rotation, preventing residue re-adherence and extending brush life during wafer surface scrubbing.

A polishing apparatus uses substrate detection signals to calculate eccentricity angles and correct measurement point positions during wafer processing.

An eddy current sensor scans the substrate surface during polishing to detect damage and slipping in real time.

Reducing liquid flow rate breaks negative pressure between the wafer and pad, preventing surface scratching during lift-off.

Strain data from the conditioner drive arm determines polishing pad wear states, preventing uneven conditioning and maintaining wafer processing accuracy.

A substrate processing apparatus integrates flow rate measurement with dynamic valve adjustment to maintain precise fluid delivery.

An isocyanate-terminated urethane prepolymer window resolves durability and defectivity trade-offs in semiconductor polishing.

Dynamic pressure control compensates for retaining ring wear, maintaining uniform downforce during chemical mechanical polishing.

A polishing apparatus uses a first fence to separate temperature control fluid from slurry along the platen rotational direction.

Controlled chemical-mechanical polishing relieves compressive stress and recovers surface quality in thin silicon carbide wafers.

Polishing pad annular discharge grooves manage slurry flow across the substrate edge.

Dynamic buffer tanks compensate for varying gas line lengths and chamber volumes, ensuring consistent responsiveness across multiple pressure regulators.

Segmented perimeter bonding allows low-force peeling separation, preventing thermal stress damage and improving throughput.

Polygonal and circular through-holes in a plate-shaped base material prevent clogging while enhancing grinding efficiency for quick filing.

Abrasive processing sets resin member surface roughness to suppress dust generation and maintain clean surfaces.

Digital motor load signals replace analog current sensors to eliminate noise interference and improve endpoint detection accuracy.

Parallel processing lines and retransfer robots reduce waiting time between chemical-mechanical polishing steps.

A buffing apparatus uses an internal supply line and external nozzle to deliver process liquid during substrate polishing.

Ultrasonic transducers vibrate CMP slurry transport piping to suspend abrasive particles, preventing chunk formation and wafer micro-scratches.

Air spray circulation recovers used slurry to reduce consumption and prevent contamination with grinding waste.

MCDEA-based polyurethane polishing pad maintains shear storage modulus of 125-500 MPa to resolve insufficient oxide film removal rates on thick layers.

A floating workpiece carrier head maintains precise flatness at high rotational speeds by using a spherical bearing to counter lateral friction forces.

Segmented protrusion units and radial trench units on the buffing pad remove small particles and suppress scratches during chemical mechanical polishing.