CMP Apparatus Segmented Pads for Edge Planarization
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Solution Overview
Problem
Current chemical mechanical polishing technologies lack the capability to perform both main and auxiliary polishing processes efficiently within a single apparatus, particularly for substrates requiring precise planarization and edge polishing, which can lead to incomplete surface smoothing and material loss.
Innovation Solution
A chemical mechanical polishing apparatus is designed with a main polishing pad and multiple auxiliary polishing pads of varying radii, along with a polishing head transferring member and a carrier, allowing for sequential and simultaneous polishing processes to achieve uniform substrate planarization and reduce material loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single polishing pad is used for main polishing, then the polishing process is simple, but auxiliary polishing processes cannot be performed
Solution Approach 1:
The polishing system is segmented into multiple independent polishing pads (first polishing pad for main polishing, second polishing pad for auxiliary polishing) that can operate separately or simultaneously. Each polishing pad has its own polishing head and can be independently controlled, allowing the system to perform different polishing functions without requiring complete system redesign.
Solution Approach 2:
The polishing apparatus is designed with multi-functionality by incorporating both main polishing and auxiliary polishing capabilities within a single system. The first and second polishing pads can handle different polishing requirements (bulk material removal vs. edge polishing), making the apparatus universally applicable for various polishing needs without requiring separate equipment.
2Manufacturing precision
If only main polishing is performed, then the process is fast, but edge polishing and local planarization are insufficient
Solution Approach 1:
The auxiliary polishing pad with smaller radius is positioned to perform preliminary edge polishing and local planarization before the main polishing process. This preliminary action on the edges and specific areas prepares the substrate for the subsequent main polishing, ensuring that edge regions are properly treated without requiring additional separate processing steps.
Solution Approach 2:
The system enables continuous polishing action by allowing the first and second polishing pads to operate simultaneously or in sequence without interrupting the overall polishing process. The substrate can be polished on different areas by different pads in a continuous manner, maintaining productive action throughout the process while achieving both edge and surface planarization.
3Adaptability or versatility
If multiple polishing pads with different radii are added, then both main and auxiliary polishing can be performed, but the apparatus becomes more complex
Solution Approach 1:
The polishing system is segmented into multiple independent polishing pads (first polishing pad for main polishing, second polishing pad for auxiliary polishing) that can operate separately or simultaneously. Each polishing pad has its own polishing head and can be independently controlled, allowing the system to perform different polishing functions without requiring complete system redesign.
Solution Approach 2:
The polishing apparatus utilizes spatial arrangement in different dimensions by positioning the first and second polishing pads at different locations and orientations. The second polishing pad with smaller radius is positioned to access edge areas, while the first polishing pad covers the central area, creating a dimensional layout that enables multiple polishing functions within a compact structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively performs both main and auxiliary polishing processes in a single setup, enhancing substrate uniformity and reducing material loss, particularly effective for semiconductor manufacturing by enabling precise edge polishing and surface smoothing.
Implementation Method 1
a first polishing pad configured to polish a substrate
Implementation Method 2
Chemical mechanical polishing
Data Source
AI summary
A chemical mechanical polishing apparatus includes a first polishing pad for polishing a substrate, a first polishing head on the first polishing pad to support a substrate, and a second polishing pad spaced apart from the first polishing pad in a horizontal direction. A radius of the second polishing pad is less than a radius of the first polishing pad.


