Lapping Machines TRIZ Cases

A retaining ring with controlled hardness prevents polishing pad distortion while ensuring uniform wafer thickness profiles.

A semiconductor wafer with controlled outer peripheral sag utilizes high-hardness polishing pads to minimize surface deviations.

The system determines the polishing endpoint by comparing accumulated torque current against real-time measurements, resolving noise interference that masks small signal changes.

A polishing pad undergoes orbital motion while maintaining a fixed angular orientation relative to the substrate.

In-situ profile control calculates dynamic polishing recipes to resolve endpoint inconsistencies caused by substrate thickness variations.

A lapping carrier uses a phase-change mounting structure to adapt rigidity during slider bar processing.

A top ring retainer guiding device constrains horizontal displacement while permitting vertical movement of the holding component.

A spectral feature tracking method measures substrate thickness to calculate a dynamic target value for endpoint detection.

CMP polishing pad conditioner monitors rotational force metrics during pre-polish to adjust recipes, resolving variability in consumable interaction.

Movable teeth in a magnetic retaining ring adjust the gap to the polishing pad, reducing edge effects and slurry consumption by optimizing fluid flow.

Embedded sensors and memory in a polishing pad transmit process data via non-contact communication units.

A chemical mechanical polishing system uses independently rotating grinding pieces to refresh the pad surface.

A polishing pad incorporates light reactive material to adjust rigidity through optical irradiation.

CVD diamond coated composite substrate maintains high removal rates while extending pad life.

Hydrophobic particles reduce surface energy in a foamed polyurethane polishing pad, resolving the contradiction between high polishing rate and defect levels.

Eddy current sensors detect disk holder movement to measure polishing pad thickness in real time.

Weighting unit adjusts phase current ratios to absorb variations, enabling accurate polishing end point detection and improving wafer yield.

A method tracks spectral feature coordinates in wavelength-intensity space to determine polishing endpoints during chemical mechanical processing.

Dual vibration sensors detect notch impacts and housing vibrations, allowing the calculator to subtract structural noise and improve rotation speed accuracy.

Laser irradiation and acid polishing suppress bump portions around penetrating structure openings to ensure conductive member filling.

Grid-based height difference calculations on a mask blank substrate ensure high symmetry, reducing deformation variability under vacuum chucking.

A substrate holding apparatus uses slope circumferential walls to adjust polishing profiles precisely.

Segmented retaining ring bottom surface reduces pad rebound effect by distributing pressure uniformly across discrete contact islands.

Real-time thickness monitoring in a CMP apparatus maintains uniformity and reduces scrap by enabling adaptive control of polishing parameters.

Segmented resilient membranes in the carrier head ensure uniform pressure distribution, reducing wafer breakage risk and improving flatness tolerances.

A drive ring uses a low modulus material to dampen vibrations transmitted from the retaining ring.

Exhaust mechanism generates upward airflow via holding portion cover gap to prevent hazardous gas diffusion without complex design changes.

Segmented fluid sources deliver timed slurry components to prevent adverse interactions, improving CMP process reliability.

Internal locking mechanism secures polishing apparatus cover, reducing slurry adherence and installation time.

A polishing device synchronizes slurry supply vibration with carrier motion to distribute fluid across the wafer surface.

A polishing head with individually controlled pressure chambers measures film thickness distribution to acquire response characteristics.

A triangular heat exchanger moves to a retreat position for cleaning, preventing substrate scratches while maintaining pad surface temperature.

Ultrasonic waves and two-fluid jets remove particles from substrates, eliminating dust adherence and initializing delays.

Eddy current sensors detect pad thickness changes to enable timely replacement and maintain consistent slurry retention.

Segmented polishing pads perform main and auxiliary processes simultaneously, resolving planarization trade-offs.

Multi-axis polishing system removes subsurface damage from narrow channels, reducing light beam scattering in imaging applications.

Pneumatic actuators drive a pusher to center wafers in the guide unit, resolving alignment errors that degrade CMP operation rates.

An adhesion-reducing interface layer positioned within a polishing pad structure alleviates concentrated stress during device manufacturing processes.

Dissolved gas concentration optimization enhances ultrasonic cavitation to remove polishing debris and reduce substrate defects.

A spectral endpoint detection method extracts feature points from reflectance curves to determine wafer film thickness during grinding.

Force sensing resistors detect non-uniform pressure on a vacuum chuck, preventing microcracks in wafers caused by manual adjustment errors.