CMP Slurry Temperature Control via Peltier Device
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Solution Overview
Problem
Chemical mechanical polishing (CMP) processes face challenges in temperature control, leading to performance variations such as dishing or erosion due to heat generated from chemical reactions and mechanical friction, which complicates the achievement of precise temperature control during the CMP operation.
Innovation Solution
A slurry temperature control device incorporating a thermo-electric (TE) chip is used to precisely control the temperature of the abrasive slurry, allowing for immediate cooling or heating, thereby directly influencing the polishing temperature and improving process control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP operation is performed with conventional slurry delivery, then polishing action is achieved, but temperature control becomes difficult due to heat from chemical reactions and mechanical friction
Solution Approach 1:
The slurry is pre-cooled or pre-heated in a temperature control device before being delivered to the polishing zone. This preliminary temperature adjustment allows the slurry to arrive at the optimal temperature for CMP operation, compensating for the heat generated during polishing and enabling precise temperature control without complex real-time intervention systems.
Solution Approach 2:
The invention changes the temperature parameter of the slurry by incorporating a temperature control device that can heat or cool the slurry before delivery. This parameter modification ensures the slurry maintains optimal temperature throughout the CMP process, resolving the temperature control precision issue while avoiding excessive system complexity through a straightforward thermal management approach.
2Reliability
If slurry temperature is not controlled, then CMP process is simpler, but performance variations such as dishing or erosion occur
Solution Approach 1:
The slurry temperature is adjusted in advance using a temperature control device before the slurry enters the polishing zone. This preliminary action ensures that the slurry reaches the polishing interface at the optimal temperature, preventing performance variations like dishing or erosion while maintaining polishing uniformity without requiring complex real-time temperature management systems.
Solution Approach 2:
The invention modifies the temperature parameter of the slurry through a dedicated temperature control device. By controlling the slurry temperature before delivery, the system achieves reliable and uniform polishing results, eliminating performance variations while adding only moderate device complexity through a focused thermal control mechanism.
3Speed
If conventional heating/cooling methods are used for slurry, then temperature adjustment is possible, but response time is slow and immediate cooling or heating cannot be achieved
Solution Approach 1:
The invention replaces conventional slow mechanical heating/cooling methods with a Peltier device, which uses electro-thermal conversion to achieve rapid temperature adjustment. This substitution enables immediate cooling or heating of the slurry by applying electrical current, providing both high response speed and precise temperature control without the delays associated with traditional thermal systems.
Solution Approach 2:
The invention achieves rapid temperature parameter changes in the slurry by using a Peltier device that can quickly switch between heating and cooling modes through electrical control. This allows immediate temperature adjustment when needed, maintaining both speed and precision in temperature management without relying on slow conventional thermal methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TE chip enables precise temperature management of the abrasive slurry, enhancing the control over CMP operations by maintaining optimal temperatures between 10° C. and 60° C., thus improving the uniformity and efficiency of the polishing process.
Implementation Method 1
a Peltier device coupled to the second end of the conduit and configured to control a temperature of the abrasive slurry in response to an applied electrical current
Data Source
AI summary
An apparatus for CMP includes a wafer carrier retaining a semiconductor wafer during a polishing operation, a slurry dispenser dispensing an abrasive slurry, and a slurry temperature control device coupled to the shiny dispenser and configured to control a temperature of the abrasive slurry. The slurry temperature control device includes a heat transferring portion surrounding a portion of the slurry dispenser, and a thermos-electric (TE) chip coupled to the heat transferring portion and configured to control the temperature of the abrasive slurry.