Lapping Machines TRIZ Cases

Segmented membrane head controls center and peripheral pressures independently, suppressing waviness and unpressurized areas at the wafer edge.

Peltier devices adjust slurry temperature to resolve friction heat, maintaining uniform polishing results.

Segmented gripping elements on a flexible membrane replace the continuous retaining ring to eliminate side loads and improve film thickness uniformity.

Scraping fixtures remove used slurry from rotating polishing pads while conductors ground accumulated charges.

Oblique abrasive movement in a second grinding step expands the device region while suppressing processing time losses from curved surface deformation.

A holder body presses an optical fiber ferrule to contract a connector spring, maintaining consistent protrusion.

Heating the substrate during rotation accelerates chemical reactions on the back face, reducing polishing time and improving flatness.

Real-time surface roughness sensing enables closed-loop control of the conditioner, reducing manual recipe development time while maintaining wafer uniformity.

A spectrographic analysis system monitors reflected light spectra to determine metal layer clearance during chemical mechanical polishing.

A silicon wafer polishing method uses a surface treatment composition with controlled abrasive concentration to reduce nano-order defects.

Segmented inflatable pad resolves pressure redistribution by dynamically adjusting contact area, preventing uneven material removal and device damage.

Segmented slurry feeding via a retainer ring adjusts edge polishing rates to minimize center-to-edge uniformity differences.

Multiple CMP heads use distinct pressure element distributions to retain workpieces during planarization.

A slurry feed system modulates pump flow rates based on real-time surface tension measurements to maintain consistent chemical mechanical planarization quality.

Sensors monitor slurry additive decay in CMP systems, triggering controller adjustments to rotational speed and pressure for consistent polishing quality.

Independent polishing arms rotate autonomously, eliminating synchronous motion bottlenecks that limit throughput and generate defects.

An organic polymer optical member achieves high surface flatness through controlled polishing and specific refractive index parameters.

A polishing apparatus uses a flash-light source to emit light multiple times during each exposure time of the light detector.

Tapered land buttresses reduce polishing dwell time and increase debris removal dwell time, lowering defectivity in semiconductor planarization.

Oxidizing agents in the slurry prevent abrasive embedding to eliminate edge roll-off while maintaining high removal rates.

An inclined housing guides acoustic signals to a sensor, resolving EPD window attenuation during chemical mechanical polishing.

A processing apparatus lifts wafers using segmented water and air ejection from a chuck table.

A swing module cover features an elongated shape with a continuous protrusion that directs liquid flow away from the distal end during rotation.

A polishing head uses reduced pressure adhesive bonding to join backing pad and template components without thermal deformation.

Alpha-alumina abrasive particles in a specific size range combined with complexing agents reduce microwaviness and edge roll-off on memory disks.

Segmented resin application and grinding corrects fixed abrasive grain wire saw damage to achieve superior surface flattening with minimal total stock removal.

Integrating sub-processing procedures eliminates fragmented CNC operations, reducing cycle time and improving processing efficiency.

A flexible membrane retaining ring assembly applies consistent pressure to a polishing pad through elastic deformation.