CMP Slurry Wave Conditioning for Faster Wafer Polishing

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Solution Overview

Problem

Current Chemical Mechanical Planarization (CMP) processes face challenges with lower material removal rates, increased slurry consumption, and surface defects due to inadequate slurry material types and application methods in semiconductor manufacturing.

Innovation Solution

The CMP method involves modifying a source of slurry by applying mechanical or electromagnetic wave energy, such as sonic or light energy, and adding material additives to enhance the polishing process, which is then applied to a wafer polishing apparatus, optimizing the CMP slurry processing system with a sealed container and energy producing devices to improve slurry flow and efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional slurry application methods are used, then the CMP process can be performed, but material removal rates are lower

Engineering Contradiction:

Improvematerial removal rateVSAvoidpolishing efficiency

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent applies ultrasonic vibration to the polishing pad or slurry delivery system to enhance material removal rates. The mechanical vibration disrupts the boundary layer between slurry and substrate, improves abrasive particle distribution, and prevents slurry stagnation, thereby significantly increasing polishing productivity without compromising surface quality

Inventive Principle:

Principle #18Mechanical vibration

Solution Approach 2:

The patent modifies slurry parameters including viscosity, particle size distribution, and chemical composition to optimize material removal rates. By adjusting these parameters and controlling slurry flow dynamics, the system achieves higher polishing efficiency while maintaining process stability

Inventive Principle:

Principle #35Parameter changes

2Productivity

If increased slurry flow is used to improve material removal, then polishing rate increases, but slurry consumption increases

Engineering Contradiction:

Improvepolishing rateVSAvoidslurry consumption

Core Design Contradiction:

ProductivityVSLoss of substance

Solution Approach 1:

The patent implements real-time monitoring of slurry flow rate, pressure, and polishing performance parameters. Based on feedback from these measurements, the system dynamically adjusts slurry delivery to maintain optimal polishing rates while minimizing excess consumption, achieving efficient slurry utilization

Inventive Principle:

Principle #23Feedback

Solution Approach 2:

The patent employs dynamic slurry delivery systems that adjust flow rates based on real-time process conditions rather than using constant high flow. This dynamic control ensures sufficient slurry supply for high polishing rates while reducing waste during steady-state operation

Inventive Principle:

Principle #15Dynamics

3Manufacturing precision

If conventional slurry processing is used, then the process is simple, but surface defects occur

Engineering Contradiction:

Improvesurface qualityVSAvoidslurry processing system complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent implements preliminary slurry treatment processes including filtration, degassing, and temperature conditioning before slurry reaches the polishing zone. This pre-processing removes contaminants and stabilizes slurry properties, preventing surface defects without requiring complex in-process intervention systems

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent replaces complex mechanical mixing and agitation systems with ultrasonic field application to the slurry. The ultrasonic energy achieves homogeneous slurry conditioning and contaminant removal through non-contact means, reducing mechanical complexity while improving surface quality

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach increases material removal rates, reduces defects, and minimizes slurry consumption, leading to improved productivity and surface quality in semiconductor wafer polishing.

Implementation Method 1

modifying the source of CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry

Methodology Applied

Scientific EffectSonic energy: Ultrasound

Implementation Method 2

modifying the source of CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry

Methodology Applied

Scientific EffectLight energy: Light

Data Source

PatentUS20240379371A1Chemical mechanical planarization slurry processing techniques and systems and methods for polishing substrate using the same

Publication Date: 2024.11.14 ARACA INC

AI summary

A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.