Lapping Machines TRIZ Cases
- Substrate Cleaning with Balanced Dual-Surface Pressing
Balanced upper and lower cleaning bodies apply equal force to clean substrates strongly without bending or deflection.
- CMP Polishing Pad Composition for Low-Debris Surface Finishing
Controlling debris size and zeta potential in a CMP polishing pad cuts scratches and defects while preserving pad properties and yield.
- Wafer Centering Mechanism for Accurate Polishing Alignment
Rotatable multi-point centering members align wafers with flats or notches accurately before polishing, improving positioning precision.
- Wafer Cleaning Tank Layout for Integrated Scrub and Non-Contact Cleaning
A swingable top-cleaning layout lets scrub and non-contact wafer cleaning coexist in one narrow tank, cutting footprint, leakage, and process time.
- CMP Cleaning Chamber Layout to Prevent Substrate Cross-Contamination
Separate wet and dry transfer openings in a CMP cleaning chamber prevent substrate cross-contamination while sustaining high-throughput handling.
- Heated Backside Polishing for Flat EUV Substrates
Heating the rotating substrate during chemo-mechanical backside polishing cuts treatment time while improving flatness for EUV exposure.
- GaN Wafer Polishing Chemistry for Higher Material Removal
Permanganate combined with nitrate or cerium(IV) ions speeds GaN wafer polishing by balancing surface oxidation and oxide film removal.
- Non-Contact Wafer Transfer for Scratch-Free Single-Side Polishing
Liquid-suction transfer with ring-shaped protrusions holds and aligns semiconductor wafers without contact, reducing scratches and light point defects.
- Radiation Thermometer Calibration for CMP Downtime Reduction
Automatic heating and controller-based calibration keep CMP radiation thermometers accurate while reducing operator burden and downtime.
- High-Resistivity Silicon Handle Wafer Flatness for Hybrid Bonding
Controlled grinding and passivation polishing compensate wafer asymmetry to achieve submicron thickness variation for hybrid substrate bonding.
- CMP Slurry Charged-Particle Removal for Wafer Damage Prevention
Electrode-based charged particle separation removes slurry impurities during CMP to protect wafers and reduce equipment failure.
- Eddy Current Sensor Coil Layout for Low-Noise Film Thickness Sensing
A detection and correction coil layout boosts eddy current sensitivity while reducing noise and readjustment in polishing film thickness measurement.
- CMP Polishing Pad Mapping for Stable Material Removal
Piezoelectric pad contact mapping tracks CMP pad roughness and uniformity to stabilize removal rates, cut defects, and extend pad life.
- CMP Slurry Composition for Corrosion-Controlled Metal Removal
A balanced chelator-inhibitor CMP slurry uses metal potential and pH tuning to sustain removal while limiting corrosion and ion re-deposition.
- Wafer Grinding Layout for Simultaneous Front and Back Surface Processing
Separate holding and grinding units let both wafer surfaces be processed in parallel, removing protrusions faster and improving throughput.
- CMP Vacuum Assembly for Polishing Pad Debris Removal
A momentum vacuum assembly clears slurry residue and polishing by-products from the CMP pad to improve removal consistency and reduce defects.
- CMP Substrate Transporter Wetting to Prevent Surface Drying
A wetting solution keeps CMP substrates wet during transport and idle time, preventing particle buildup, slurry residue, and yield loss.