CMP Stopper Film for Semiconductor Flatness
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Solution Overview
Problem
The chemical mechanical polishing (CMP) technique in semiconductor manufacturing faces challenges in achieving in-plane uniformity and flatness, particularly with high-step and large-area patterns, which increases polishing time and reduces productivity.
Innovation Solution
A manufacturing method involving the formation of protruding and depressed portions on a substrate, where a second CMP stopper film is used to control polishing rates and prevent dishing, allowing for selective polishing and improved flatness without the need for additional etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CMP is used to flatten large-area and high-step patterns, then in-plane uniformity and flatness deteriorate, but polishing time increases and productivity decreases
Solution Approach 1:
The interlayer insulating film is divided into depressed portions and protruding portions with different polishing rates. The depressed portions are polished faster than the protruding portions, enabling selective flattening that maintains both flatness and reduces polishing time.
Solution Approach 2:
Different regions of the film are given different polishing characteristics by forming depressed portions with higher polishing rates in specific areas. This local differentiation allows precise control over flattening in different zones, improving overall flatness while optimizing polishing time.
2Productivity
If polishing rate is increased to improve productivity, then dishing occurs and manufacturing precision deteriorates
Solution Approach 1:
The film structure is designed with depressed portions having higher polishing rates and protruding portions with lower polishing rates. This local quality differentiation ensures that high-speed polishing occurs only where needed, preventing dishing in critical areas while maintaining overall productivity.
Solution Approach 2:
The depressed and protruding portion structure is formed before polishing to pre-determine the polishing rate distribution. This preliminary structuring allows the polishing process to naturally achieve the desired flatness without excessive material removal, preventing dishing while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate flattening of interlayer insulating films with reduced dishing and improved flatness, enhancing productivity and cost-effectiveness by minimizing the number of processes required.
Implementation Method 1
a chemical mechanical polishing (hereinafter briefly referred to as "CMP") technique is a flattening technique used in a manufacturing process of a semiconductor device
Data Source
AI summary
In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on the surfaces thereof, respectively, forming a second film different from the first films so as to fill a depressed portion between the protruding portions and to cover the protruding portions, processing in such a manner that the top surface of the second film on the depressed portion is higher than the top surface of the second film on the protruding portions after forming the second film to cover the protruding portions, and polishing the second film on the depressed and protruding portions to expose the first films.