Lapping Machines TRIZ Cases

See how an inclination mechanism enables turn table transport through narrow passages by tiltin

A one-to-one CMP module layout enables parallel loading, unloading, and polishing to remove substrate handling bottlenecks and raise throughput density.

Tilted outlet channels and zoned core geometry improve post-CMP fluid distribution, cutting cleaning time and contamination defects.

An in-platen orientation sensor scans the substrate edge to locate a reference mark and align endpoint readings with wafer rotation.

Guanidinium-based polymer additives help tungsten CMP slurries cut dishing and erosion while maintaining polishing rates and wafer planarity.

Fresh polishing liquid is fed by nozzle and center discharge passages to avoid rotary-joint particles, protect the substrate surface, and sustain polishing rate.

Magnetic seating sensing replaces optical detection in substrate pushers to avoid slurry and cleaning water interference and improve handling accuracy.

When substrate position sensors fail, controller-accepted external input keeps transfer and processing running to prevent deterioration and downtime.

Embedded abrasive grains in double-sided polishing pads raise carrier plate removal rate while maintaining flatness for wafer polishing.

In-situ eddy current feedback detects underlying layer exposure during CMP and switches control logic to improve within-wafer thickness uniformity.

A conductive body embedded in the polishing pad improves thermal coupling to the platen, enabling faster CMP pad temperature control.

Embedded diamond particles in an RBSC CMP pad conditioner resist corrosion-driven loss while maintaining flat, stable wafer conditioning.

Annular pressure chambers flex the CMP platen edge to correct wafer thickness non-uniformity and stabilize polishing rates.

Multi-point thickness measurement guides region-specific wafer planarization, reducing step height while improving processing speed and surface uniformity.

A caterpillar module linked to rotating bodies and a temperature controller stabilizes CMP polishing temperature while limiting pad contamination.

Insulated sensor mounting blocks conductive noise and vibration, improving AE-based CMP end-point detection accuracy.

Integrated buffer and coating modules between polishing and cleaning stages improve space use, transfer flow, and contamination control.

A permanganate-rich SiC CMP slurry with broader particle distribution improves substrate coverage, polishing rate, and surface finish.

Flexure-mounted arcuate CMP pads use lateral positioning and controlled pressure to correct radial non-uniformity and improve edge flatness.

A liquid-filled optical path shields roller rotation sensing from droplets and mist, preventing false signals and process stops.

Independent membrane pressure zones and a support plate keep CMP contact uniform on wafers with flats, reducing burning, breakage, and waste.

Inner grooves and a protruding wheelbase wall redirect grinding water to porous abrasive members, cutting erosion and thermal BOW defects.

Real-time thickness feedback moderates chuck table or spindle inclination changes to improve wafer thickness uniformity without destabilizing grinding.

Eccentric rollers add orbital and axial wafer motion to raise head-to-surface speed and improve full-surface cleaning and processing.

A patterned peripheral photoresist layer reinforces wafer edges during back grinding, reducing chipping and cracking without added tooling cost.

A rotary multi-station wafer machine combines grinding, lapping, and polishing to raise SiC wafer throughput while limiting tool wear and damage.

Using ionic liquid slurry in vacuum CMP suppresses substrate oxidation while maintaining polishing rate, cooling, and endpoint control.

A porous pad with abrasive-free chemistry planarizes raised substrate areas while reducing CMP defects, contamination, and maintenance.

Ultrasonically vibrating abrasive grains in a water bath keep contact with the wafer backside, forming gettering scratches faster.

Iron-ligand silica CMP slurry raises carbon film removal while reducing residue and trench erosion in semiconductor polishing.

Heated chemical etching combined with mechanical grinding boosts wafer removal rate while reducing surface roughness, damage, and failure risk.

Two same-material workpieces polish each other with relative motion and polishing liquid to cut surface roughness without heavy tool wear.

Vibration spectrum analysis detects wafer micro-scratches during CMP in real time, avoiding optical inspection stops and reducing yield loss.

Foamed slurry in CMP improves pad retention and polishing efficiency while reducing slurry waste and supporting better surface quality.

Selective heating of a chelator-based CMP pad rinse removes metal by-products based on runoff concentration, cutting defects and pad wear.

A conductive pad assembly enables electrochemical SiC wafer polishing with lower tool wear, less heat, and more uniform planarization.

Simultaneous backside grinding, cleaning, slurry feed, and polishing reduce wafer cracks while maintaining thickness control and device-layer integrity.

Filters CMP sensor readings by selecting effective data points within each table revolution, improving film thickness, temperature, and vibration measurement.

A porous suction member with a flexible shielding and gas bag stabilizes wafer holding, prevents edge breakage, and adjusts pressurization zones.

Insulating members and vibration damping improve AE sensor signal quality for accurate CMP polishing end-point detection.

Steam nozzles clean and preheat CMP conditioner parts to remove slurry debris and stabilize pad temperature for better polishing uniformity.

Laser graphitization turns the diamond top layer into removable graphite, enabling faster CMP, smoother surfaces, and less cracking.

A CMP slurry balances ruthenium and hard mask removal with azole corrosion inhibition to limit copper damage in advanced semiconductor polishing.

A diversion valve and separation chamber keep cleaning agents primed during idle periods, cutting ramp-up time and improving module throughput.

Keeping wafers wet during CMP transfer and idle time helps block slurry residue, pad debris, and particle defects that lower yield.

Time-varying zoned CMP pressure compensates for substrate precession to match target removal profiles and reduce angular thickness asymmetry.

By placing contact cleaning inside the CMP polishing module, substrate transfer and air time drop, reducing contamination, defects, and oxidation.

Variable slurry flow functions across polishing intervals cut CMP slurry use while maintaining polishing rate and planarization quality.

Measured wafer shape guides surfactant type and concentration to correct edge and center flatness variation during polishing.

A convergent-divergent nozzle cools the CMP pad with gas and ice droplets to stabilize temperature and improve polishing uniformity.

Dual claws and split transfer platforms separate dry and wet wafers during CMP handling to cut contamination, waiting time, and yield loss.

A staged pH shift keeps slurry strongly acidic early, then raises pH to balance semiconductor polishing rate with smoother surfaces.

HF and ozonated water pre-etch the silicon rear surface before resin-abrasive polishing removes chuck marks and lowers roughness.

A magnetic-field-tuned polishing pad enables controlled SiC wafer CMP with non-corrosive electrolyte, reducing slurry waste and equipment corrosion.

Fluid-pressurized perimeter chamber design improves CMP edge pressure control and polishing uniformity without clamp-heavy sealing.

In-process sensor signals from polishing, cleaning, and drying feed an ML model that predicts substrate defects without full inspection.

Dry steam cleans and preheats CMP conditioner parts to cut slurry residue, reduce defects, and stabilize pad temperature.

Two-stage CMP switches from larger to smaller abrasive slurry to improve polish quality, cut scratching risk, and reduce slurry waste.

Infrared light passing through pad transmission patterns heats CMP slurry from below, improving polishing temperature control and productivity.

Eddy current monitoring detects conductive layer exposure during CMP, enabling algorithm switching to improve within-wafer uniformity.

Fine lapping and small-particle shot peening smooth hypoid gear teeth, preserve the oil film, and cut motive power transmission loss.

An adhesive seal prevents slurry leakage through polishing pad apertures while maintaining clear optical pathways for chemical mechanical polishing.

A CMP stopper film controls polishing rates to flatten interlayer insulating films on semiconductor substrates.

Surface projections concentrate force on sapphire substrates to increase material removal rates while reducing abrasive slurry loss during lapping.

Spray nozzles clean substrates immediately after polishing, preventing particle adhesion and improving yield.