Wafer Planarization Control Using Multi-Point Thickness Mapping
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Solution Overview
Problem
The increasing surface step height of semiconductor wafers due to higher density, miniaturization, and multilayering of wiring structures poses challenges in achieving efficient planarization, particularly in methods like chemical mechanical polishing (CMP) and laser beam irradiation.
Innovation Solution
A substrate processing apparatus with a measurement module to measure thickness at multiple points, a substrate processor for localized planarization, and a controller to optimize planarization processes based on thickness information, enabling differential control of planarization times and intensities across different regions of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CMP or laser beam irradiation is used for planarization, then surface step height can be reduced, but manufacturing efficiency and production speed deteriorate due to the time-consuming nature of these processes
Solution Approach 1:
The substrate surface is divided into multiple measurement points (first points and second points) with different thickness characteristics. The planarization process is segmented into different stages: first planarization for first points and second planarization for second points, allowing differential processing that optimizes both precision and efficiency
Solution Approach 2:
Thickness measurement is performed in advance at multiple points before the planarization process. This preliminary measurement enables the controller to determine the appropriate planarization time for each region, avoiding trial-and-error approaches and reducing overall processing time while ensuring precise planarization
2Device complexity
If uniform planarization time is applied across the entire substrate, then process simplicity is maintained, but manufacturing precision deteriorates due to inability to address local thickness variations
Solution Approach 1:
Different planarization parameters (time, intensity) are applied to different regions of the substrate based on local thickness characteristics. First points receive first planarization treatment while second points receive second planarization treatment, ensuring each region is planarized according to its specific needs rather than applying a uniform approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves manufacturing efficiency by accelerating the planarization process and ensuring uniformity across the substrate surface, enhancing the production speed and quality of semiconductor devices.
Implementation Method 1
a measurement module configured to measure at least one thickness of the substrate
Implementation Method 2
a planarization process by irradiating a laser beam onto the surface of the semiconductor wafer
Implementation Method 3
a substrate processor configured to perform a planarization process using a beam on the substrate
Data Source
AI summary
A substrate processing apparatus includes a substrate having first points and second points different from the first points, a measurement module configured to measure at least one thickness of the substrate, a substrate processor configured to perform a planarization process on the substrate, and a controller configured to control the substrate processor based on thickness information of the substrate measured by the measurement module. The controller is configured to control the substrate processor to planarize the first points based on first thickness information of the substrate including first thicknesses measured at the first points and to control the substrate processor to planarize the second points based on second thickness information of the substrate including second thicknesses measured at the second points.