Diamond Layer Planarization via Laser Graphitization and CMP

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Solution Overview

Problem

As semiconductor devices continue to integrate more components into a given area with reduced minimum feature sizes, challenges arise in efficiently removing material layers and achieving planarization without causing stress concentrations or surface roughness that can lead to device cracking.

Innovation Solution

A method involving laser treatment to transform a diamond layer into a graphite layer, followed by chemical mechanical planarization (CMP) to remove the graphite layer, leaving a remaining diamond layer for heat dissipation, which is further processed to achieve optimal thickness and surface roughness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional material removal methods are used to planarize the diamond layer, then material can be removed, but the polishing rate is low and stress concentrations occur leading to device cracking

Engineering Contradiction:

Improvepolishing rateVSAvoiddevice cracking

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent transforms the diamond layer into a graphite layer by changing the material parameter (crystalline structure) through laser irradiation. This parameter change enables much higher polishing rates while reducing stress concentrations that cause cracking in conventional diamond planarization

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent utilizes the phase transition from diamond to graphite through laser-induced transformation. This phase transition fundamentally changes the mechanical properties of the material, allowing for high-rate removal without the stress concentration problems inherent in polishing diamond directly

Inventive Principle:

Principle #36Phase transitions

2Temperature

If the diamond layer is made thinner to improve heat dissipation efficiency, then heat dissipation improves, but the layer becomes more susceptible to stress concentrations and cracking

Engineering Contradiction:

Improveheat dissipation efficiencyVSAvoiddevice cracking

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

By transforming the diamond layer into graphite through laser irradiation, the patent changes the material parameters to achieve a configuration that can be made thinner for improved heat dissipation while maintaining structural integrity and resistance to stress concentrations

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent performs preliminary laser transformation of the diamond layer into graphite before final planarization and device assembly. This preliminary action creates a material structure that is both thin enough for effective heat dissipation and sufficiently robust to avoid stress-induced cracking

Inventive Principle:

Principle #10Preliminary action

3Productivity

If high polishing rates are achieved on the diamond layer, then productivity improves, but stress concentrations increase causing device cracking

Engineering Contradiction:

Improvepolishing rateVSAvoidstress concentration

Core Design Contradiction:

ProductivityVSStrength

Solution Approach 1:

The patent changes the material parameter from diamond to graphite through laser transformation, enabling high polishing rates to be achieved without the stress concentration problems that plague conventional diamond polishing. The transformed material allows aggressive removal while maintaining structural strength

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for high polishing rates of the transformed diamond layer, reducing stress concentrations and improving the reliability and robustness of semiconductor devices by effectively dissipating heat and enhancing surface smoothness.

Implementation Method 1

performing a laser treatment on a top portion of the diamond layer by applying laser energy to the top portion of the diamond layer using a laser beam

Methodology Applied

Scientific EffectLaser transformation: Laser

Implementation Method 2

transform a diamond layer into a graphite layer

Methodology Applied

Scientific EffectPhase transformation: Phase Change

Implementation Method 3

chemical mechanical planarization (CMP) to remove the graphite layer

Methodology Applied

Scientific EffectMechanical polishing: Abrasion

Implementation Method 4

effectively dissipating heat

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250336683A1Planarization process and method

Publication Date: 2025.10.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method includes forming a device layer on a first surface of a first substrate, forming a first interconnect structure over the device layer, depositing a bonding layer over the first interconnect structure, forming a diamond layer over the bonding layer, performing a laser treatment on a top portion of the diamond layer by applying laser energy to the top portion of the diamond layer using a laser beam, and performing a thinning process on the diamond layer to remove the top portion of the diamond layer.