Diamond-like Carbon-Nitride-Carbon Hardmask for Semiconductor Fabrication
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional carbon hardmask films in semiconductor fabrication impose high compressive stress on substrates and require additional process steps to reduce stress and improve etch resistance and selectivity, increasing costs and complexity.
Innovation Solution
A diamond-like carbon-nitride-carbon (CNC) hardmask is introduced, formed by incorporating nitride atoms into the carbon film to create stable sp3 bonds, reducing compressive stress and enhancing etch selectivity and uniformity, which allows for fewer process steps and improved material stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional carbon hardmask films are used, then etch mask function is provided, but high compressive stress is imposed on substrates and additional process steps are required
Solution Approach 1:
The patent applies composite materials by creating a carbon-nitride-carbon (CNC) hardmask layer that combines carbon and nitride components. This composite structure provides both the etch mask function and reduced compressive stress inherently, eliminating the need for separate stress reduction process steps that would be required with conventional carbon hardmask films.
2Reliability
If conventional carbon hardmask films are used, then etch mask function is provided, but etch resistance and selectivity need improvement requiring additional process steps
Solution Approach 1:
The carbon-nitride-carbon composite structure inherently provides improved etch resistance and selectivity compared to conventional carbon hardmasks. The nitride component enhances the material's resistance to etching while maintaining pattern definition capability, eliminating the need for additional process steps to improve these properties.
Solution Approach 2:
The patent changes the material composition parameters by incorporating nitride atoms into the carbon matrix, creating a composite with optimized etch resistance and selectivity. This parameter change (adding nitride content) directly improves etch performance without requiring subsequent process steps.
3Area of stationary object
If conventional carbon hardmask films are used, then substrate coverage is achieved, but high compressive stress requires additional stress reduction steps
Solution Approach 1:
The carbon-nitride-carbon composite hardmask layer provides inherent stress management properties. The composite structure reduces compressive stress on the substrate while maintaining complete substrate coverage, eliminating the need for additional stress reduction process steps that would be required with conventional carbon films.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diamond-like CNC hardmask reduces substrate stress, improves etch selectivity and uniformity, and enhances the electrical characteristics of semiconductor devices, simplifying the fabrication process and reducing costs.
Implementation Method 1
incorporating nitride atoms into the carbon film to create stable sp3 bonds
Implementation Method 2
polymers tend to be etched more easily by various reactive gases
Data Source
AI summary
An embodiment of an apparatus may include a substrate and a semiconductor structure disposed on the substrate, where the semiconductor structure comprises a plurality of layers of material and where at least one layer of the plurality of layers of material comprises carbon-nitride-carbon (CNC). Other embodiments are disclosed and claimed.