Carbon Nanotube Bolometer Array With Per-Pixel Electric Field Tuning

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Solution Overview

Problem

Existing bolometer arrays suffer from variations in the doping state of the semiconducting carbon nanotube film, which leads to variations in the carrier density of states, causing inefficiencies in detection performance.

Innovation Solution

A bolometer array with a control device capable of adjusting a voltage applied to the third electrode for each bolometer, which includes a control device capable of adjusting a voltage applied to the third electrode for each bolometer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a plurality of bolometers are arranged in an array to improve detection coverage, then the detection area increases, but variations in the doping state of the semiconducting carbon nanotube film cause variations in resistance value and resistance temperature coefficient, deteriorating detection performance

Engineering Contradiction:
Improvedetection areaVSAvoiddetection performance
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent applies local quality by introducing a third electrode adjacent to each semiconducting carbon nanotube film to independently adjust the electric field for each bolometer. This allows local compensation for doping state variations in each region of the array, ensuring consistent detection performance across the entire array while maintaining large detection area coverage.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the electric field parameter applied to each semiconducting carbon nanotube film by adjusting the voltage on the third electrode. By modifying this physical parameter, the resistance value and resistance temperature coefficient are compensated for variations in doping state, thereby maintaining uniform detection performance across all bolometers in the array.

Inventive Principle:
Principle #35Parameter changes

2Strength

If the semiconducting carbon nanotube film is doped with protective film substance to improve film protection, then film durability increases, but the doping state varies depending on position, causing variations in carrier density of states and resistance characteristics

Engineering Contradiction:
Improvefilm durabilityVSAvoiddoping state uniformity
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent compensates for the non-uniform doping state caused by protective film deposition by adjusting the electric field parameter for each bolometer through the third electrode. This allows the system to maintain optimal resistance characteristics despite variations in doping concentration across different positions.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements a feedback mechanism where the third electrode adjusts the electric field based on the actual characteristics of each semiconducting carbon nanotube film. This feedback loop compensates for manufacturing variations in doping state, ensuring that each bolometer operates with consistent performance characteristics.

Inventive Principle:
Principle #23Feedback

3Measurement precision

If individual adjustment of each bolometer's characteristics is implemented to improve detection performance, then detection precision increases, but device complexity increases due to additional electrodes and control mechanisms

Engineering Contradiction:
Improvedetection precisionVSAvoidelectrode structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces a third electrode adjacent to each semiconducting carbon nanotube film to enable independent adjustment of the electric field for each bolometer. This local adjustment capability allows precise compensation for position-dependent doping variations, improving detection precision while maintaining a relatively simple electrode configuration compared to full individualized control systems.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The bolometer array is capable of suppressing variations in detection performance due to differences in the characteristics of the bolometers, such as resistance value and resistance temperature coefficient, by adjusting the electric field applied to the carbon nanotube film.

Implementation Method 1

a third electrode that is disposed apart from the semiconducting carbon nanotube film and that is capable of adjusting an electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film

Methodology Applied
Scientific EffectElectric field adjustment: Electric Field

Implementation Method 2

bolometers are used to detect infrared rays

Methodology Applied
Scientific EffectBolometer detection: Bolometer

Implementation Method 3

the properties of the semiconducting carbon nanotube film change in a case where the film is doped with a substance such as a protective film

Methodology Applied
Scientific EffectElectrical resistance: Electrical Resistance

Data Source

PatentUS20250347564A1Bolometer array, bolometer array unit, and light detection method
Publication Date: 2025.11.13 NEC CORP
  • US20250347564A1 patent drawing
  • US20250347564A1 patent drawing
  • US20250347564A1 patent drawing

AI summary

A bolometer array includes a plurality of bolometers and a substrate on which the bolometers are arranged side by side, each bolometer comprising a first electrode, a second electrode disposed on either side of the first electrode via an inter-electrode region, a semiconducting carbon nanotube film connected to the first electrode and the second electrode, and a third electrode disposed apart from the semiconducting carbon nanotube film and capable of adjusting the electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film.