Carbon Nanotube Vertical Interconnects for Stacked Semiconductor Adhesion
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Solution Overview
Problem
In semiconductor devices with stacked substrates, achieving high reliability in electrical connections between conductive patterns is challenging due to inadequate adhesion and increased contact resistance, particularly when insulating interlayers with conductive patterns are bonded.
Innovation Solution
Incorporating carbon nanotubes (CNTs) within the conductive patterns, which extend vertically and contact each other upon bonding of the substrates, enhancing adhesion and reducing contact resistance by forming a secure electrical connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates with insulating interlayers containing conductive patterns are bonded to form stacked structure, then integration density is improved, but adhesion between conductive patterns deteriorates and contact resistance increases
Solution Approach 1:
The conductive pattern is formed as a composite structure comprising a base conductive layer and carbon nanotubes (CNTs) embedded within an insulating interlayer. The CNTs serve as vertical conductive pathways that penetrate through the insulating interlayer, creating a composite material system that combines the electrical conductivity of metals with the mechanical strength and vertical penetration capability of carbon nanotubes. This composite structure simultaneously achieves good adhesion and low contact resistance while maintaining high integration density through vertical stacking.
2Productivity
If substrates with insulating interlayers containing conductive patterns are bonded to form stacked structure, then integration density is improved, but contact resistance between conductive patterns increases
Solution Approach 1:
Carbon nanotubes act as intermediary elements between the conductive patterns on different substrates. The CNTs extend vertically through the insulating interlayer, making contact with conductive patterns on both the lower and upper substrates. This intermediary structure provides a direct conductive pathway that bridges the gap between stacked conductive layers, significantly reducing contact resistance while enabling high integration density through vertical stacking architecture.
3Ease of manufacture
If conventional bonding of insulating interlayers is used, then manufacturing process is simple, but electrical connection reliability deteriorates
Solution Approach 1:
Carbon nanotubes are formed within the insulating interlayer before the bonding process. The CNTs are vertically aligned and extend through the insulating interlayer in advance, creating pre-formed conductive pathways. When substrates are bonded, these pre-positioned CNTs automatically establish electrical connections between conductive patterns on different substrates, eliminating the need for complex post-bonding alignment processes while ensuring reliable electrical connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of CNTs increases the adhesion between conductive patterns and decreases contact resistance, thereby enhancing the reliability of the electrical connections in stacked semiconductor devices.
Implementation Method 1
The first plurality of CNTs may extend in a vertical direction relative to an upper surface of the first substrate, and at least a portion of a sidewall of each of the first plurality of CNTs may be covered by the first conductive pattern. The second plurality of CNTs may extend in the vertical direction, and at least a portion of a sidewall of each of the second plurality of CNTs may be covered by the second conductive pattern. The first and second conductive patterns may face each other in the vertical direction, and at least one of the first plurality of CNTs and at least one of the second plurality of CNTs may contact each other.
Data Source
AI summary
A semiconductor device includes a first conductive pattern at an upper portion of a first insulating interlayer on a first substrate, a first plurality of conductive nanotubes (CNTs) extending vertically, a second conductive pattern at a lower portion of a second insulating interlayer beneath a second substrate, and a second plurality of CNTs extending vertically. A lower surface of the second insulating interlayer contacts an upper surface of the first insulating interlayer. At least a portion of a sidewall of each of the first plurality of CNTs is covered by the first conductive pattern, and at least a portion of a sidewall of each of the second plurality of CNTs is covered by the second conductive pattern. The first and second conductive patterns vertically face each other, and at least one of the first plurality of CNTs and at least one of the second plurality of CNTs contact each other.