Semiconductor/Solid-State Device Details TRIZ Cases

Stress buffer regions adjacent to metal fuse bodies manage compressive stress during electromigration.

Shield structures overlay digital and analog portions of mixed-signal integrated circuits to limit signal propagation between regions.

Segmented dielectric spacers mitigate RC-delay by reducing coupling capacitance while maintaining structural integrity in integrated circuits.

Varying contact pad sizes by distance from center prevents edge peeling and bridging while maintaining reliability.

A millimeter-wave semiconductor package uses a transformer structure to convert differential chip signals to single-ended package interfaces.

A bump-forming material expands into a porous film to fill gaps between substrates during bonding.

An embedded through-via interposer bridges pitch mismatches and reduces thermal stress in packaging substrates.

A silicone rubber sheet placed between the resin case and silicone gel prevents direct contact within the power semiconductor module.

A heat sink uses a through hole to inject thermally conductive material into the gap between the chip and the sink body.

Nitrogen-doped diamond layers relax electric fields via field plates, resolving surface leakage while maintaining high breakdown voltage.

Detachable modular pump and heat exchange units reduce overall height and assembly complexity while enabling quick component replacement.

Integrated circuit packaging system with stacked integrated circuit and method of manufacture thereof

A leadframe with integrated bodies creates openings through an encapsulant to enable vertical electrical interconnect between semiconductor dies.

Multi-layer bitlines distribute conductors across vertical metal layers, increasing spacing to reduce capacitance and overcome fixed pitch limitations.

Stacking an IC and TVS chip vertically via conduction plugs eliminates bond wire inductances that degrade electrostatic discharge protection.

A modified silicon oxide relief layer absorbs passivation stress to prevent water-resistance degradation and fuse cutting defects.

Bumpless build-up layer substrates embed dice with direct bus connections, eliminating space constraints and electrical interference from through-silicon vias.

A semiconductor structure uses a diffusion barrier layer on conductive feature sidewalls to block dopant migration.

Aligning the post with the sealing resin eliminates overhangs that restrict package downsizing while a shielding film blocks infrared interference.

Internal support structures reinforce thinned semiconductor wafers, mitigating stress-induced warping and delamination caused by uneven metal density.

Varying metal segment pitches across consecutive layers improves chip area utilization and reduces design rule check violations.

A stepped electrode-defining layer forms distinct effective angles to reduce gate-drain spacing in III-N semiconductor devices.

Accommodating spaces in the first connection layer capture excess solder, preventing short circuits between adjacent bumps.

Integrated lead frames merge mounting and reflection functions to reduce packaging complexity while improving light extraction efficiency.

Direct copper through electrode connections eliminate bump and solder ball formation, reducing manufacturing costs while maintaining electrical reliability.

Extending conductive traces into the assembly isolation region forms additional electric components within the semiconductor structure.

Segmented solder bonding gaps reduce cutting stress on sealing frames, preventing reliability loss during wafer dicing.

A buffer chip mediates signals between external devices and stacked memory arrays, maintaining communication precision despite increased integration.

Depressing inner leads outside the chip area minimizes resin thickness differences to prevent warpage during cooling.

A stacked semiconductor package design segments signal transmission paths into shared and independent portions to adjust electric lengths.

Embedding a chip in a composite board with a soft layer and hard layer prevents deviation during redistribution layer processing.

Vertical carbon nanotubes bridge conductive patterns in stacked semiconductor substrates to establish direct electrical pathways.

Segmented sub-resolution alignment marks maintain pattern integrity during spacer patterning, eliminating extra photomasks and reducing fabrication complexity.

Electroless plating deposits a precise protective layer on the light reflection layer, preventing oxidation and migration during microminiaturization.

Electroplated metal side pads on leadless semiconductor packages enable Automated Optical Inspection, resolving hidden terminal inspection challenges.

Filler material fills encapsulation recesses to provide a flat foundation for conductive layers, preventing disconnections and bridging defects.

Segmented control electrodes in a press pack cell maintain consistent drive voltage, reducing switching delays caused by main contact voltage drops.

Dummy conductors mitigate the loading effect in semiconductor packaging, ensuring uniform electrical connector dimensions and reducing manufacturing defects.

Displacing copper with silver reduces electrical resistance and diffusion into low-k dielectrics, lowering RC delay.

Stacked MOSFETs and PCB vias conduct heat vertically, reducing package size and fabrication costs.

Single-step oxygen implantation forms a buried oxide layer and trap-rich region to suppress parasitic surface conduction in RF devices.

Photoelectric cell powers integrated circuit to trigger self-destruct sequence, preventing reverse engineering of design information.

Silicon substrate semiconductor apparatus uses anodic bonding to seal device housing spaces with via plugs for electrical connections.

Selective surface treatment reduces barrier thickness at contact interfaces, lowering resistance while maintaining diffusion reliability.

A transfer substrate uses a laser ablation layer to release light emitting diodes without mechanical contact.

Oriented cellulose fibers and spherical inorganic particles in a silicone matrix maintain flexibility while delivering high thermal conductivity.

A supercritical fluid deposits conductive material uniformly within high aspect ratio vias without requiring a seed layer.

Internal tensile stress in a segmented dielectric cap counteracts electromigration forces, minimizing void formation and enhancing interconnect reliability.

A segmented printed circuit board design with a thermally conductive plate distributes LED heat, reducing hot spots in enclosed vehicle dashboard housings.

Down bond wires connect a switching pad to a base, defining die functions internally and reducing pin count to lower manufacturing costs.

Alternating precursor treatments create a thin barrier that reduces thickness and increases conductivity.

A flexible semiconductor substrate connects contact portions via metallic interconnects and conductive traces to enable compact electrical routing.

A three-dimensional semiconductor device uses stacked word lines and interconnection layers to enhance integration density.

Recessed interposer edges allow encapsulant flow to prevent warping while supporting stacked dies in a compact integrated circuit package.

A stack package uses a flexible bridge die and polyimide substrates to enable vertical stacking with bending capability.

Segmented folding leadframes resolve alignment accuracy trade-offs by rotating coil portions for optimized magnetic coupling strength.

A heat transfer blocking spacer interposed between stacked semiconductor chips limits thermal interference.

An intermediate buffering layer manages thermal stress between copper circuits and ceramic substrates, preventing delamination in high-efficiency LED devices.

An etch-stop and blocking layer shield through electrodes from polishing damage, preventing metal residue formation.

Redistribution lines between stacked active surfaces decrease input capacitance, improving operation speed and reducing signal delay times.

Curvature-dependent lateral etch removes inactive dummy channel rows to boost device density without adding manufacturing complexity.

Segmented solder pads and inter-metallic compound layers prevent interface separation in flipchip LEDs, reducing reliance on expensive gold-tin alloys.

Integrating a ceramic capacitor between substrates reduces switching noise by 30 percent while lowering thermal resistance below 0.3°C/W in compact modules.

A one-piece chassis integrates electrical components with a parallel heat sink to consolidate the welding power supply assembly.

Wafer level molding and solder bumps provide mechanical support for ultra-thin wafers, reducing damage risk during processing while achieving low on-resistance.

Limited contact bonding with high modulus adhesive reduces stress on PLC substrate while maintaining mechanical strength.

Segmented resin layers and nested shielding walls minimize module size while blocking electromagnetic noise between closely arranged components.

An asymmetric binding layer compensates thermal stress to reduce warpage below 100 micrometers.

An NT-Cu layer with anisotropic crystal structure bonded to a seed layer prevents copper diffusion into dielectric layers.

Thermoshock wafer dicing separates microelectronic devices via thermal stress, reducing particulate contamination and improving yield.

Slots in the passivation layer anchor polymer films to prevent peeling and cracking, resolving interface weakness in WLCSP devices.

Segmented conductive lid bends toward multiple substrates to resolve bonding reliability and heat dissipation trade-offs.

Rear-mounted screw holes in the retainer secure the heat sink without drilling through the circuit board, preserving wiring area and preventing deformation.

Fill material within dielectric support openings matches the layer's coefficient of thermal expansion to reduce peel stress at bond wire stitch bonds.

Encapsulating copper in gold prevents etchant erosion of the conductive support, reducing material costs while maintaining structural integrity.

Metal gettering agents in TSV dielectric liners trap escaping copper fillers to protect semiconductor integrity.

A BGA package ground ring connects a heat spreader to the substrate via conductive material.

A multi fan-out package structure uses overlapping conductive lines to enhance alignment precision in semiconductor die integration.

A connecting component with varying metal concentrations bonds dissimilar materials, resolving mechanical tension from thermal expansion mismatch.

Mixed boiling point coolants in spray systems increase critical heat flux and maintain surface wetness, preventing dryout at high thermal loads.

A method using etch-stop layers to create vias and trenches with precise depths in semiconductor structures.

A heat sink retainer verification method uses electrical contacts on a printed circuit board to confirm mechanical attachment.

Stiffener layer maintains mechanical rigidity in thinner integrated circuit substrates, resolving warping issues during large-scale strip manufacturing.

Multilayer encapsulation film adsorbs moisture and conducts heat through a metal layer to protect organic electronic devices.

Embedding an antenna in the gap between bonded 3D IC devices prevents signal attenuation and maintains high interconnect density.

Conductive patterns act as dams to position capacitors near flip chips, reducing parasitic inductance and capacitance.

Waveguide interconnect structure converts electrical signals to electromagnetic waves for high-frequency transmission between semiconductor chips.

A semiconductor ESD protection circuit uses a substrate capacitor to reduce voltage stress on transistors.

A UV-cured conductive ink method deposits material into patterned trenches to form redistribution layers over semiconductor dies.

Flip chip coupling eliminates wire bonding and silver plating requirements to enhance die size capabilities and assembly yield.

A wiring board pad with a tapered section projects from the mounting surface to guide solder flow.

Deep trenches in a metallic substrate form independent thermal conduction blocks that lower LED working temperatures without plated through holes.

Controlled oxygen concentration in the oxide barrier prevents organic contamination while maintaining low electrical resistance.

Exothermic reactive layers generate localized heat to melt solder and attach microelectronic components with sub-micron precision.

Continuous first and second through-cavities create a three-dimensional flow channel that dissipates heat from compact electronic devices.

Placing word lines in the M3 metal layer reduces capacitive coupling with segmented power conductors, lowering the RC value and improving memory access speed.

Local quality limits expensive thermally conductive bodies to high heat generation zones, reducing manufacturing costs while maintaining efficient heat removal.

Protrusions guide underfill flow through capillary action, filling gaps without enlarging the device or reducing light extraction efficiency.

Forming a step cavity in the encapsulant layer reduces peripheral stiffness, relieving stress on outermost solder balls during drop tests.